Agilent Technologies, Inc.

Avago Technologies General IP (singapore) Pte. Ltd.

Avago Technologies Fiber IP (singapore) Pte. Ltd

Chaokun Lin

David P Bour

Scott W Corzine

Michael R Tan

Kostadin Dimitrov Djordjev

Mihail Sigalas

Ashish Tandon

Bill Perez

An improved tunnel junction structure and a VCSEL that uses this structure is disclosed. The tunnel junction includes first, second, and third layers that include materials of the InP family of materials. The first layer is doped with n-type dopant species to a concentration of 10dopant atoms per cmor greater. The second layer is doped with Zn to a similar concentration and is in contact with the first layer. The interface between the first and second layers forms a tunnel junction. The third layer includes a material that retards the diffusion of Zn out of the second layer. The third layer preferably includes undoped AlInAs. The tunnel junction structure of the present invention can be utilized in a VCSEL having an active layer between first and second mirrors that are both constructed from n-type semiconductor layers.

Laser employing a zinc-doped tunnel-junction

The electroabsorption modulator comprises a p-i-n junction structure that includes an active layer, a p-type cladding layer and an n-type cladding layer with the active layer sandwiched between the cladding layers. The electroabsorption modulator additionally comprises a quantum well structure located within the active layer. The p-type cladding layer comprises a layer of heavily-doped low-diffusivity p-type semiconductor material located adjacent the active layer that reduces the extension of the depletion region into the p-type cladding layer when a reverse bias is applied to the electroabsorption modulator. The reduced extension increases the strength of the electric field applied to the quantum well structure by a given reverse bias voltage. The increased field strength increases the extinction ratio of the electroabsorption modulator.

Electroabsorption modulator

A modulator having a waveguide and a microdisk resonator is disclosed. The waveguide has an input port for receiving a light signal of wavelength &#x3bb; and an output port for transmitting modulated light. The microdisk resonator has a resonance at &#x3bb; and is coupled to the waveguide between the input and output ports such that at least 10 percent of the light traveling in the waveguide is coupled to the microdisk resonator. The microdisk resonator further includes a material having a first state and a second state, the material absorbing more of the light in the first state than in the second state. The first and second states are selectable by a signal that is applied to the microdisk resonator. In one embodiment, the waveguide and the microdisk resonator occupy different portions of a sheet of material having the various layers used to construct the resonator.

Optical modulator based on a microdisk resonator

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Fremont, CA, United States of America

Chaokun Lin