Panjit International Inc.

Chaohsin Huang

Seungchul Lee

Youngchul Choi

A fabrication method of forming a silicon carbide MOSFET is provided. The fabrication method includes the step of providing a semiconductor substrate. A P-well region is formed by implanting the semiconductor substrate through the P-well mask. A spacer is disposed on sidewall of the P-well mask and the P-well region is implanted to form an N-plus layer. A P-plus mask is disposed on the semiconductor substrate and the semiconductor substrate is implanted to form a P-plus layer. A gate oxide layer, a poly gate and a first interlayer dielectric layer are formed on the semiconductor substrate. A second interlayer dielectric layer is disposed on sidewall of the poly gate and the first interlayer dielectric layer. A metal layer is disposed to cover the first interlayer dielectric layer and the second interlayer dielectric layer.

Growing community of inventors

Taipei, Taiwan

Chaohsin Huang