Innoscience (Suzhou) Technology Co., Ltd.

Innoscience (Suzhou) Semiconductor Co., Ltd.

Ai Speech Co., Ltd.

Robert Boschgmbh

Chao Yang

Qiyue Zhao

Chunhua Zhou

Wuhao Gao

Maolin Li

Shaopeng Cheng

Guanshen Yang

Jingyu Shen

Baoli Wei

Yong Liu

Weigang Yao

Yu Shi

Zhongyuan Dai

Taotao Guo

Min Chu

Dong Sun

Dachuan Guo

Baichao Tong

A nitride-based semiconductor device includes a first nitride-based semiconductor layer, a second nitride-based semiconductor layer, a third nitride-based semiconductor layer, a passivation layer, a gate insulator layer, and a gate electrode. The first nitride-based semiconductor layer includes at least two doped barrier regions defining an aperture between the doped barrier regions. The second nitride-based semiconductor layer is disposed over first nitride-based semiconductor layer. The third nitride-based semiconductor layer is disposed on the second nitride-based semiconductor layer and has a bandgap higher than a bandgap of the second nitride-based semiconductor layer. The passivation layer is disposed over the third nitride-based semiconductor layer, in which a vertical projection of the passivation layer on the first nitride-based semiconductor layer is spaced apart from the aperture. The gate insulator layer is disposed over the third nitride-based semiconductor layer. The gate electrode is disposed over the gate insulator layer and aligns with the aperture.

Nitride-based semiconductor device and method for manufacturing the same

The present disclosure provides a nitride-based bidirectional switching device with substrate potential management capability. The device has a control node, a first power/load node, a second power/load node and a main substrate, and comprises: a nitride-based bilateral transistor and a substrate potential management circuit configured for managing a potential of the main substrate. By implementing the substrate potential management circuit, the substrate potential can be stabilized to a lower one of the potentials of the first source/drain and the second source/drain of the bilateral transistor no matter in which directions the bidirectional switching device is operated. Therefore, the bilateral transistor can be operated with a stable substrate potential for conducting current in both directions.

Nitride-based semiconductor bidirectional switching device and method for manufacturing the same

Semiconductor device structures and methods for manufacturing the same are provided. The semiconductor device structure includes a substrate, a first nitride semiconductor layer, a second nitride semiconductor layer, a gate electrode, a first electrode, a first via and a second via. The substrate has a first surface and a second surface. The first nitride semiconductor layer is disposed on the first surface of the substrate. The second nitride semiconductor layer is disposed on the first nitride semiconductor layer and has a bandgap exceeding that of the first nitride semiconductor layer. The gate electrode and the first electrode are disposed on the second nitride semiconductor layer. The first via extends from the second surface and is electrically connected to the first electrode. The second via extends from the second surface. The depth of the first via is different from the depth of the second via.

Semiconductor device structures and methods of manufacturing the same

Semiconductor device structures and methods for manufacturing the same are provided. The semiconductor device structure includes a substrate, a first nitride semiconductor layer, a second nitride semiconductor layer, a barrier layer, a third nitride semiconductor layer and a gate structure. The first nitride semiconductor layer is disposed on the substrate. The second nitride semiconductor layer is disposed on the first nitride semiconductor layer and has a bandgap greater than that of the first nitride semiconductor layer. The barrier layer is disposed on the second nitride semiconductor layer and has a bandgap greater than that of the second nitride semiconductor layer. The third nitride semiconductor layer is doped with impurity and disposed on the barrier layer. The gate structure is disposed on the third nitride semiconductor layer.

A flip-chip semiconductor package with improved heat dissipation capability and low package profile is provided. The package comprises a heat sink having a plurality of heat dissipation fins and a plurality of heat dissipation leads. The heat dissipation leads are connected to a plurality of thermally conductive vias of a substrate so as to provide thermal conductivity path from the heatsink to the substrate as well as support the heatsink to relieve compressive stress applied to a semiconductor die by the heatsink. The package further comprises an encapsulation layer configured to cover the heat dissipation leads of the heat sink and expose the heat dissipation fins of the heat sink.

Semiconductor package and method for manufacturing the same

Disclosed is a human-computer dialogue method including determining a set number of jump topics about a target topic, and generating a topic jump map converging to the target topic based on the correlation intensions among the set number of jump topics; after an initial response to a user's dialogue request, selecting from the topic jump map a jump topic to which the user's dialogue request relates as an initial topic for a first round of recommendation; after completing a human-machine dialogue of the initial topic, determining a jump topic to jump according to the jump probability of jumping out of the initial topic to the k jump topics at the downstream level for a next round of recommendation; and gradually guiding from the initial topic to the target topic by step-by-step recommendation. A more fluent and efficient human-machine dialogue based on a clear communication goal can be realized.

Human-machine dialogue method and electronic device

Growing community of inventors

Suzhou, China

Chao Yang