Broadcom Corporation

Broadcom Corpotation

Avago Technologies International Sales Pte. Limited

Chao-Yang Lu

Akira Ito

Guang-Jye Shiau

Agnes Woo

Jung Wang

Pascal Tran

Embodiments described herein provide a structure for finger capacitors, and more specifically metal-oxide-metal ('MOM') finger capacitors and arrays of finger capacitors. A plurality of Shallow Trench Isolation (STI) formations is associated with every other column of capacitor fingers, with poly fill formations covering the STI formations to provide a more robust and efficient structure.

Metal finger capacitor for high-K metal gate processes

According to embodiments of the invention, a field transistor structure is provided. The field transistor structure includes a semiconductor substrate, a metal gate, a polycrystalline silicon (polysilicon) layer, and first and second metal portions. The polysilicon layer has first, second, third, and fourth sides and is disposed between the semiconductor substrate on the first side and the metal gate on the second side. The polysilicon layer is also disposed between the first and second metal portions on the third and fourth sides. According to some embodiments of the present invention, the field transistor structure may also include a thin metal layer disposed between the polysilicon layer and the semiconductor substrate. The thin metal layer may be electronically coupled to each of the first and second metal portions.

Field transistor structure manufactured using gate last process

Growing community of inventors

Sunnyvale, CA, United States of America

Chao-Yang Lu