Ememory Technology Inc.

Chao-Wei Kuo

Wein-Town Sun

Ching-Yuan Lin

Yu-Hsiung Tsai

Yuan-Tai Lin

Shang-Wei Fang

The present invention provides a flash memory including a memory cell, a current limiter and a program voltage generator. The memory cell is programmed in response to a program current and a program voltage. The current limiter reflects amount of the program current by a data-line signal, e.g., a data-line voltage. The program voltage generator generates and controls the program voltage in response to the data-line voltage, such that the program current can track to a constant reference current.

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Taipei, Taiwan

Chao-Wei Kuo