Zhuhai Pantum Electronics Co., Ltd.

Innoscience (Zhuhai) Technology Co., Ltd.

Ninestar Corporation

Zhuhai Seine Technology Co., Ltd.

Apex Technology Co., Ltd.

Gree Electric Appliances, Inc. of Zhuhai

Gree Electric Appliances (Wuhan) Co., Ltd

Chao Wang

King Yuen Wong

Qiyue Zhao

Chunhua Zhou

Jianxin Cao

Hang Liao

Chang An Li

Yang Li

Likun Zeng

Hailong Ma

Hui Cao

Jinlian Liu

Miaoling Yang

Ronghua Li

Yongchao Nie

Hongbiao Xiao

Aiguo Yin

Peng Wang

Zhe Shao

Geming Ding

Qin Luo

Ming-Hong Chang

Shuchun Dai

Zhongzheng Li

Dongning Wang

Lai Luo

Yuechao Ge

Wanhong Huang

Shengyu Wei

Tao Liu

Yi Zhang

Hongjun Xie

Hongbin Liao

Hongbing Wang

Changsheng Wang

Hongyu Yang

Huashen Lin

Zhongli Yin

Jinhua Peng

De Chien

Wenyi Ding

De Chen

Ruiliang Xie

Aihong Tang

Xiangxing Bai

Xiaobing Zhou

Bocheng Yu

Shasha Li

Shaoke Tang

A semiconductor device and a fabrication method thereof are provided. The semiconductor device includes a first nitride semiconductor layer, a second nitride semiconductor layer, a gate structure, and a field plate. The second nitride semiconductor layer is formed on a first surface of the first nitride semiconductor layer. The gate structure is disposed on the second nitride semiconductor layer. The field plate includes a first portion and a second portion connected to the first portion. The first portion has a first surface substantially in parallel to the first surface of the first nitride semiconductor layer, and a second surface adjacent to the first surface of the first portion. The first surface of the first portion of the field plate and the second surface of the first portion of the field plate define a first angle of about 90°.

Semiconductor device and fabrication method thereof

The present disclosure provides a light scanning unit and an electronic image forming apparatus including the light scanning unit. The light scanning unit includes a light source, a first optical unit, an optical deflector, and a second optical unit. The light source includes at least two light-emitting points; the at least two light-emitting points are distributed along a straight line; and an angle between an extension direction of a distribution line thereof and a main scanning direction or a secondary scanning direction of the light scanning unit includes an acute angle, where the main scanning direction is perpendicular to the secondary scanning direction. The first optical unit is configured to collimate at least two light beams emitted from the light source along the main scanning direction and to focus the at least two light beams emitted from the light source along the secondary scanning direction.

Light scanning unit and electronic image forming apparatus

The present invention relates to a semiconductor device having an improved gate leakage current. The semiconductor device includes: a substrate; a first nitride semiconductor layer, positioned above the substrate; a second nitride semiconductor layer, positioned above the first nitride semiconductor layer and having an energy band gap greater than that of the first nitride semiconductor layer; a source contact and a drain contact, positioned above the second nitride semiconductor layer; a doped third nitride semiconductor layer, positioned above the second nitride semiconductor layer and between the drain contact and the source contact; and a gate electrode, positioned above the doped third nitride semiconductor layer, where the doped third nitride semiconductor layer has at least one protrusion extending along a direction substantially parallel to an interface between the first nitride semiconductor layer and the second nitride semiconductor layer, thereby improving the gate leakage current phenomenon.

Semiconductor device having improved gate leakage current

Optical scanner and electrophotographic image forming apparatus are provided. The optical scanner includes a light source, configured to emit a light beam; an optical deflector, configured to deflect the light beam emitted from the light source; a first optical unit, arranged there-between and including a refraction unit and a diffraction unit; and a second optical unit, arranged in a light exit direction of the optical deflector and configured to make the light beam deflected by the optical deflector form an image on a scanning target surface. A range of a ratio of a refractive power &#x3a6;to a diffractive power &#x3a6;of the first optical unit in a main scanning direction is 0.3&#x3c;&#x3a6;/&#x3a6;&#x3c;0.5; and a range of a ratio of a refractive power &#x3a6;to a diffractive power &#x3a6;of the first optical unit in a sub scanning direction is 0.7&#x3c;&#x3a6;/&#x3a6;&#x3c;1.0.

Optical scanner and electrophotographic image forming apparatus

Optical scanner and electrophotographic image forming device are provided. The optical scanner includes a light source; and a first optical unit, a deflection apparatus, and an f-&#x3b8; lens, which are sequentially arranged along a primary optical axis direction of a light beam emitted from the light source. The light beam emitted from the light source is focused onto a scanning target surface after sequentially passing through the first optical unit, the deflection apparatus, and the f-&#x3b8; lens. Optical scanning directions of the light beam emitted from the light source include a primary scanning direction and a secondary scanning direction which are perpendicular to each other, and along the primary scanning direction, the f-&#x3b8; lens satisfies following expressions: SAG1&#x3e;0, SAG2&#x3e;0, and 0&#x3c;(SAG1+SAG2)/d&#x3c;0.8.

An optical scanning device and an electronic imaging apparatus are provided. The optical scanning device includes a light source, a first optical unit, an optical deflector, and an imaging optical system for guiding a light beam deflected by the optical deflector to a scanned surface for imaging. The imaging optical system includes an F-&#x3b8; lens satisfying fc/fs&#x2264;0.6, X1&#x2212;X1c&#x3e;0, and X2&#x2212;X2c&#x3e;0, where fs is a focal length of the F-&#x3b8; lens, fc is an f&#x3b8; coefficient of the F-&#x3b8; lens; X1 is a distance between a projection of one incident point on the main optical axis and the scanning origin, X2 is a distance between a projection of one exit point on the main optical axis and the scanning origin, X1c is a distance between the central incident point and the scanning origin, and X2c is a distance between the central exit point and the scanning origin.

Optical scanning device and electronic imaging apparatus

A semiconductor device includes a channel layer, a barrier layer, source contact and a drain contact, a doped group III-V layer, and a gate electrode. The barrier layer is positioned above the channel layer. The source contact and the drain contact are positioned above the barrier layer. The doped group III-V layer is positioned above the barrier layer and between the first drain contact and the first source contact. The first doped group III-V layer has a first non-vertical sidewall and a second non-vertical sidewall. The gate electrode is positioned above the doped group III-V layer and has a third non-vertical sidewall and a fourth non-vertical sidewall. A horizontal distance from the first non-vertical sidewall to the third non-vertical sidewall is different than a horizontal distance from the second non-vertical sidewall to the fourth non-vertical sidewall.

Semiconductor device with asymmetric gate structure

The present invention relates to a semiconductor device with an asymmetric gate structure. The device comprises a substrate; a channel layer, positioned above the substrate; a barrier layer, positioned above the channel layer, the barrier layer and the channel layer being configured to form two-dimensional electron gas (2DEG), and the 2DEG being formed in the channel layer along an interface between the channel layer and the barrier layer; a source contact and a drain contact, positioned above the barrier layer; a doped group III-V layer, positioned above the barrier layer and between the drain contact and the source contact; and a gate electrode, positioned above the doped group III-V layer and configured to form a Schottky junction with the doped group III-V layer, wherein the doped group III-V layer and/or gate electrode has a non-central symmetrical geometry so as to achieve the effect of improving gate leakage current characteristics.

An optical scanning device and an imaging apparatus are provided. The optical scanning device includes a light source for emitting a light beam, a first optical unit for collimating the light beam emitted by the light source in a main scanning direction and focus the light beam in an auxiliary scanning direction, an optical deflector for deflecting the light beam, and an imaging optical system for guiding the light beam to a scanned surface for imaging. When the optical deflector deflects the light beam at a maximum deflection angle, the light beam in the main scanning direction forms a maximum incident angle &#x3a6;with a normal line of the scanned surface. A spot tilt rate e/a of a light spot on the scanned surface satisfies where a is a size of the light spot in the main scanning direction and e is a spot tilt.

Optical scanning device and imaging apparatus

Multi-function printer

The present invention provides a developing cartridge, including a chip and conductive connecting pieces, provided on the developing cartridge, a cover of a printer is provided with chip contact heads, where one end of each of the conductive connecting pieces is connected to a chip terminal, and when the developing cartridge is inserted into the printer and the cover is closed, the other end of the conductive connecting piece contact with side surface of the chip contact head on the cover and squeezes the developing cartridge, preventing the developing cartridge from vibrating up and down during use.

Developing cartridge

The present invention relates to a rotational force driving assembly and a process cartridge used for being engaged with a rotational force driving head inside an electrophotographic image forming device. The rotational force driving assembly can comprise a hub, a rotational force receiving component, a side plate, and an axis offset adjusting mechanism. When the axis offset adjusting mechanism is not subjected to external force, the axis offset adjusting mechanism enables the axis of the rotational force receiving component to be parallel and offset to the axis of the hub. When the axis offset adjusting mechanism is subjected to external force, the rotational force receiving component extends out to be engaged with the rotational force driving head.

Rotational force driving assembly process cartridge

Rotational force driving assembly and process cartridge

Growing community of inventors

Zhuhai, China

Chao Wang