Phoenix Pioneer Technology Co., Ltd.

Chao-Tsung Tseng

Shih-Ping Hsu

Che-Wei Hsu

Chin-Ming Liu

A semiconductor packaging substrate is provided, which includes a build-up circuit structure, at least one fiducial marker structure, and an insulating protective layer. The fiducial marker structure includes a fiducial marker and a second insulating layer covering the fiducial marker. The second insulating layer is made of a transparent insulation material, so that the fiducial marker inside the second insulating layer can be seen through a CCD lens or tool maker microscope for alignment so as to easily create a smaller see-through area and the process parameters can be easily controlled. Besides, the disclosure further provides a manufacturing method for the semiconductor packaging substrate.

Semiconductor packaging substrate and manufacturing method thereof

A semiconductor package structure includes a chip, a conductive pillar, a dielectric layer, a first patterned conductive layer and a second patterned conductive layer. The chip has a first side with at least a first metal electrode pad and a second side with at least a second metal electrode pad. The conductive pillar, which has a first end and a second end, is disposed adjacent to the chip. The axis direction of the conductive pillar is parallel to the height direction of the chip. The dielectric layer covers the chip and the conductive pillar and exposes the first and second metal electrode pads of the chip and the first and second ends of the conductive pillar. The first patterned conductive layer is disposed on a second surface of the dielectric layer and electrically connected between the second metal electrode pad and the second end of the conductive pillar. The second patterned conductive layer is disposed on a first surface of the dielectric layer and electrically connected between the first metal electrode pad and the first end of the conductive pillar.

Semiconductor package structure and method of making the same

The present invention discloses an IC Carrier of a semiconductor package and its manufacturing method. The IC Carrier of the semiconductor package includes a dielectric layer and a patterned conductor layer. The dielectric layer has at least one opening groove. The patterned conductor layer is embedded in the dielectric layer, wherein a part of the patterned conductor layer is as a conductive pillar, which has two exposed ends, and a part of the patterned conductor layer is as a conductive wire, which only has one exposed end.

IC carrier of semiconductor package and manufacturing method thereof

A package apparatus comprises a first conductive wiring layer, a first conductive pillar layer, a first conductive glue layer, an internal component, a second conductive pillar layer, a first molding compound layer and a second conductive wiring layer. The first conductive pillar layer is disposed on the first conductive wiring layer. The first conductive glue layer is disposed on the first conductive wiring layer. The internal component has a first electrode layer and a second electrode layer, wherein the first electrode layer is disposed and electrical connected to the first conductive glue layer. The second conductive pillar layer is disposed on the second electrode layer. Wherein the first conductive wiring layer, the first conductive pillar layer, the first conductive glue layer, the internal component and the second conductive pillar layer are disposed inside the first molding compound layer.

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Hsinchu County, Taiwan

Chao-Tsung Tseng