Chang Gung University

Nan Ya Technology Corporation

Other

Chao-Sung Lai

Shian-Jyh Lin

Chia-Ming Yang

Chih-Wei Huang

Min-Hsien Wu

Chun-Hui Chen

Hsing-Kan Peng

Yung-Hsiang Lin

Chung-Yuan Lee

Tzu-Ching Tsai

Tseng-Fu Lu

Liann-Be Chang

Hsin-Jung Ho

Yu-Ping Chen

Yu-Sun Chang

Ray-Ming Lin

Jau-Song Yu

Cher-Ming Tan

Tung-Ming Pan

Hsien-Chin Chiu

I-Shun Wang

Szu-Chieh Wang

Chu-Fa Chan

Bing-Shan Hong

Chao-Wei Lin

S E Chow

Hsin-Shun Huang

Cheng-En Lue

Chien Chou

Tsung-Cheng Chen

Po-Chuan Chen

Po-Lung Yang

Yi-Ting Lin

Wei-Yin Zeng

Wen-Yu Chuang

Ting-Chun Yu

Jyh-Ping Chen

Preetpal Singh

Chou Chien

Hsin-Yin Peng

Chi-Hsien Huang

Ming-De Huang

The present invention discloses a nanoparticle control and detection system and operating method thereof. The present invention controls and detects the nanoparticles in the same device. The device comprises a first transparent electrode, a photoconductive layer, a spacer which is deposed on the edge of the photoconductive layer and a second transparent electrode. The aforementioned device controls and detects the nanoparticles by applying AC/DC bias and AC/DC light source to the transparent electrode.

Nanoparticle control and detection system and operating method thereof

The present invention provides capacitor-based fluid sensing units. The capacitor-based fluid sensing unit comprises a substrate, a first electrode configured on the substrate, a sensing layer configured on the first electrode, a second electrode configured on the sensing layer. More particularly, the second electrode is a porous electrode, while the sensing layer is made of a porous dielectric material and has a thickness between 50 nm and 5 mm. Permittivity of the sensing layer changes as fluid permeates from the second electrode to the sensing layer. The subsequent change in capacitance of the capacitor-based fluid sensing unit is used to determine the volume of the fluid.

Capacitor-based fluid sensing units and operating methods thereof

Light-addressable potentiometric sensing units are provided. A light-addressable potentiometric sensing unit comprises a conductive substrate, a metal oxide semiconductor layer, and a sensing layer. The metal oxide semiconductor layer is made of indium gallium zinc oxide, indium gallium oxide, indium zinc oxide, indium oxide co-doped with tin and zinc, tin oxide, or zinc oxide. The wide-band gap characteristic of the metal oxide semiconductor layer enables the light-addressable potentiometric sensing unit to resist the interference from visible light. The light-addressable potentiometric sensing unit therefore exhibits a more stable performance.

Light-addressable potentiometric sensing units

A semiconductor structure having a multiple-porous graphene layer includes a sapphire substrate, a single or multiple layer porous graphene film, and a gallium nitride layer. A fabrication method for forming the semiconductor structure having a single or multiple layer porous graphene film, includes: firstly, growing up the graphene on the copper foil; then, using the acetone and isopropyl alcohol to wash the sapphire substrate, and then using the nitrogen flow to dry up; transferring the graphene onto the semiconductor substrate, using the Poly(methyl methacrylate) to fix the single or multiple layer porous graphene film, and using the acetone to wash up; using the photolithography process to etch the whole surface of the multiple-porous graphene layer; and, using the metalorganic chemical vapor deposition to deposit gallium nitride on the single or multiple layer porous graphene film and the sapphire substrate.

Semiconductor structure having a single or multiple layer porous graphene film and the fabrication method thereof

The invention provides a plasma processing device, wherein the upper electrode and the lower electrode are in the vacuum chamber. The chip is placed in the lower electrode. The first plate is placed between the upper electrode and the lower electrode, and the first plate includes a plurality of first voids. The second plate is placed between the first plate and the lower electrode, and the second plate includes a plurality of second voids. The high frequency power is provided by the upper electrode and the lower electrode in the vacuum chamber, and the plasma is generated between the third plate and the upper electrode. The plasma is filtered by the third void, the first void, and the second void.

Plasma processing device

A light-assisted biochemical sensor based on a light addressable potentiometric sensor is disclosed. The light-assisted biochemical sensor comprises a semiconductor substrate and a sensing layer, which are used to detect the specific ion concentration or the biological substance concentration of a detected solution. Lighting elements fabricated directly on the back surface of the semiconductor substrate directly illuminate the light to the semiconductor substrate, so as to enhance the photoconduction property of the semiconductor substrate. And then, the hysteresis and the sensing sensitivity of the light-assisted biochemical sensor are respectively reduced and improved. In addition, due to its characteristics of integration, the light-assisted biochemical sensor not only reduces the fabrication cost but also has portable properties and real-time detectable properties. As a result, its detection range and the application range are wider.

Light-assisted biochemical sensor

The NHplasma treatment by remote plasma is firstly proposed to replace the covalent bonding process during surface modification procedure that for amine bond generation.

[object Object]

A method of patterning a metal alloy material layer having hafnium and molybdenum. The method includes forming a patterned mask layer on a metal alloy material layer having hafnium and molybdenum on a substrate. The patterned mask layer is used as a mask and an etching process is performed using an etchant on the metal alloy material layer having hafnium and molybdenum so as to form a metal alloy layer having hafnium and molybdenum. The etchant includes at least nitric acid, hydrofluoric acid and sulfuric acid. The patterned mask layer is removed.

Method of patterning metal alloy material layer having hafnium and molybdenum

A sensing device includes: a semiconductor layer of a field effect semiconductor having upper and lower surfaces; a conductive layer formed on the lower surface of the semiconductor layer; and a sensor layer of an insulator formed on the upper surface of the semiconductor layer. The insulator is made from lanthanide-titanium oxide.

Sensing device

The invention discloses a sensitive field effect transistor apparatus, which uses an inorganic membrane to sense hydrogen ions. The invention adopts the membrane with high deformation stress. The sensitivity of the sensitive membrane to hydrogen ions is adjusted through altering the membrane thickness and changing the substrate type and doped concentration. A differential amplifier is used to read a signal to form the inorganic Ion Sensitive Field Effect Transistor/Reference Field Effect Transistor apparatus.

Sensitive field effect transistor apparatus

A semiconductor device including a metallic compound HfMoNas an electrode. The work function of the electrode can be modulated by doping the metallic compound with dopants including nitrogen, silicon or germanium. The metallic compound of the present invention is applicable to PMOS, NMOS, CMOS transistors and capacitors.

Semiconductor device and method of manufacturing the same

An oxidized low density lipoprotein sensing device for a gallium nitride process is a GaN HEMT device including: a gateless AlGaN/GaN sensing transistor device, a testing window, a source, a drain, two metal connecting wires and a passivation layer. The gateless AlGaN/GaN sensing transistor device has an epitaxial wafer structure including a GaN layer and an aluminum gallium nitride layer. The testing window is disposed on the epitaxial wafer structure. The metal connecting wire is disposed on a source and a drain. The passivation layer is covered onto a surface of the sensing device except the testing window. A built-in piezoelectric field is created by the properties of FET and the polarization effect of AlGaN/GaN to achieve the effect of sensing the level of oxidizing proteins in human body quickly, accurately and easily.

Oxidized low density lipoprotein sensing device for gallium nitride process

A method for forming bottle trenches. The method comprises providing a substrate formed with a pad stack layer on the top, and a deep trench with protective layer on the upper portions of sidewalls thereof, implanting ions into the lower portions of sidewalls and bottom of the trench not covered by the protective layer to amorphize the atomic structure of the sidewalls and bottom, oxidizing the amorphous sidewalls and bottom of the trench to form a bottle-shaped oxide layer thereon, and removing the bottle-shaped oxide layer.

Method for forming bottle trenches

A method for forming a bottle-shaped trench. A semiconductor substrate having a pad stack layer thereon and a trench in a predetermined position is provided. A first dielectric layer is then formed on the lower sidewalls of the trench. Next, a second dielectric layer is formed to cover the upper sidewalls of the trench and the pad stack layer. Then, a protection layer is formed on the sidewalls portions of the second dielectric layer. The first dielectric layer is then removed to expose the lower portion of trench. Wet stripping is then carried out to increase the radius of the lower portion of the trench thereby forming a bottle-shaped trench.

Method for forming a bottle-shaped trench

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Taoyuan, Taiwan

Chao-Sung Lai