Yangtze Memory Technologies Co., Ltd.

Chao Shen

Zhiliang Xia

Lei Li

Bingguo Wang

Qiangmin Wei

Dejian Chen

Junzhan Liu

Wenting Wang

Hai Song

Xinxin Huang

Song Liu

Zhiping Xu

Aspects of the disclosure provide methods for polysilicon characterization. The method includes receiving image data of a polysilicon structure formed on a sample substrate. The image data is in a spatial domain and is generated by transmission electron microscopy (TEM). Further, the method includes extracting frequency spectrum of the image data in a frequency domain. Then, the method includes selecting a subset of the frequency spectrum that corresponds to characteristic of first crystal grains that are of a first orientation, and transforming the selected subset of the frequency spectrum to the spatial domain to construct a first spatial image for the first crystal grains of the first orientation.

Methods for polysilicon characterization

Embodiments of memory devices and fabrication methods thereof are disclosed. In an example, a memory device includes a substrate, a memory stack, and a channel structure. The memory stack includes interleaved conductor layers and dielectric layers over the substrate. The channel structure extends through the memory stack into the substrate and includes a functional layer that includes a tunneling layer of which a nitrogen weight percent is not greater than about 28%.

Channel structure having tunneling layer with adjusted nitrogen weight percent and methods for forming the same

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Wuhan, China

Chao Shen