Omnivision Technologies, Inc.

Chao Niu

Gang Chen

Hui Zang

Qin Wang

Zhiqiang Lin

Chih-Wei Hsiung

Yuanwei Zheng

Kazufumi Watanabe

Image sensors include a pixel array arranged about an array center, each pixel of the pixel array having a photodiode formed in a semiconductor substrate, and a central deep trench isolation structure disposed in the semiconductor substrate relative to a pixel center between the photodiode and an illuminated surface of the semiconductor substrate. If the pixel center is not coincident with the array center, then the central deep trench isolation structure is disposed at a CDTI shift distance away from the pixel center.

Central deep trench isolation shift

A pixel array includes 2×2 groupings of photodiodes to generate image charge in response to incident light directed through a back side of the semiconductor layer. A Quad Bayer filter is disposed over the back side of the semiconductor layer over the 2×2 groupings of photodiodes. Each color filter of the Quad Bayer CFA is disposed over a respective one of the plurality of 2×2 groupings of photodiodes. Trench balance structures are disposed in the semiconductor layer. Each of the trench balance structures is disposed in the semiconductor layer between one of the photodiodes and a respective one of the red color filters of the Quad Bayer filter. None of the trench balance structures are disposed between any of the photodiodes and respective green color filters or blue color filters of the Quad Bayer filter.

Trench balance structure pattern in red photodiodes of a pixel array with quad bayer color filter

An image sensor includes an active pixel photodiode, a black pixel photodiode, a metal grid structure, and a light shield. Each of the active pixel photodiode and the black pixel photodiode are disposed in a semiconductor material having a first side and a second side opposite the first side. The first side of the semiconductor material is disposed between the light shield and the black pixel photodiode. The metal grid structure includes a first multi-layer metal stack including a first metal and a second metal different from the first metal. The light shield includes a second multi-layer stack including the first metal and the second metal. A first thickness of the first multi-layer metal stack is less than a second thickness of the second multi-layer metal stack.

Multi-layer metal stack for active pixel region and black pixel region of image sensor and methods thereof

A flare-reducing image sensor includes a plurality of pixels, Nin number, and a plurality of microlenses, Nin number, where each of the plurality of microlenses is aligned to a respective one of the plurality of pixels, such that N=N. The flare-reducing image sensor further includes a plurality of phase-shifting layers, N, in number, where each phase-shifting layer is aligned with a respective one of the plurality of microlenses, where N, is less than or equal to N.

Flare-reducing image sensor

Embodiments disclosed herein reduce petal flare. A flare-suppressing image sensor includes a plurality of pixels including a first set of pixels and a second set of pixels. The flare-suppressing image sensor further includes plurality of microlenses, where each microlens is aligned to a respective one of the first set of pixels. The flare-suppressing image sensor further includes plurality of sub-microlens, where each microlens array is aligned to a respective one of the second set of pixels.

Flare-suppressing image sensor

A pixel cell includes a photodiode disposed proximate to a front side of a semiconductor layer to generate image charge in response to incident light directed through a backside of the semiconductor layer. A cell deep trench isolation (CDTI) structure is disposed along an optical path of the incident light to the photodiode and proximate to the backside of the semiconductor layer. The CDTI structure includes a plurality of portions arranged in the semiconductor layer. Each of the plurality of portions extends a respective depth from the backside towards the front side of the semiconductor layer. The respective depth of each of the plurality of portions is different than a respective depth of a neighboring one of the plurality of portions. Each of the plurality of portions is laterally separated and spaced apart from said neighboring one of the plurality of portions in the semiconductor layer.

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Santa Clara, CA, United States of America

Chao Niu