Applied Materials, Inc.

Chao-Ming Hung

Hung-Chuan Chen

Tzy-Tzan Fu

In a method of forming silicon nitride on a substrate, a substrate is provided in a reaction chamber and a nitrogen-containing gas is introduced into the chamber so that a portion of the nitrogen-containing gas is chemically adsorbed on the substrate surface. Thereafter, the reaction chamber is pumped down to remove the nitrogen-containing gas. A silicon-containing gas is introduced into the reaction chamber to react with the adsorbed nitrogen-containing gas to form a silicon nitride layer on the substrate. Thereafter, the silicon-containing gas may be removed and the cycle repeated to deposit additional silicon nitride layers on the substrate.

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Hsinchu, Taiwan

Chao-Ming Hung