Boe Technology Group Co., Ltd.

Beijing Boe Technology Development Co., Ltd.

Tiandi Science & Technology Co., Ltd.

Ccteg Coal Mining Research Institute

Chao Luo

Zhi Hu Wang

Zhaohui Qiang

Chao Li

Feng Guan

Jianhua Du

Rui Huang

Yang Lv

Yupeng Gao

Chang Liu

Jianwei Yang

Li Qiang

Xiaoming Cao

Yang Lyu

Yongzheng Wu

Ziyue Wang

Yaozhong Wei

Jichang Guo

Zhiliang Chen

Huiqin Zhang

Pengfei Jiang

Hongpu Kang

Disclosed are a method and system for temporary coating supporting and permanent bolt supporting. Tunnel excavation construction operation is composed of a plurality of operation cycle units, and each of the operation cycle units includes: excavating by at least one row pitch to form a new tunnel; spraying a coating material onto a surface of the new tunnel to form a sealing coat on a surface of surrounding rock, wherein the sealing coat has an adhesive property and a sealing property both meeting preset conditions, and has a tensile strength and a toughness needed for supporting; and inserting bolts into the new tunnel to perform permanent supporting.

Method and system for temporary coating supporting and permanent bolt supporting

A thin film transistor includes a base, a first electrode, an active pattern, a gate insulating layer, a gate and a second electrode. The active pattern includes a first semiconductor pattern, a second semiconductor pattern and a third semiconductor pattern. A material of one of the first semiconductor pattern and the third semiconductor pattern includes a semiconductor material and N-type doped ions, and a material of another of the first semiconductor pattern and the third semiconductor pattern includes the semiconductor material and P-type doped ions. An orthogonal projection of the gate on the base is non-overlapping with an orthogonal projection of the active pattern on the base.

Thin film transistor and method of manufacturing the same, display substrate, and display device

A thin film transistor includes a gate, a gate insulating layer, an active layer, an ionized amorphous silicon layer, a source and a drain. The gate insulating layer covers the gate. The active layer is disposed on a side of the gate insulating layer away from the gate. The ionized amorphous silicon layer is disposed on a side of the active layer away from the gate, and the ionized amorphous silicon layer is in contact with the gate insulating layer. The source and the drain are disposed on a side of the ionized amorphous silicon layer away from the gate insulating layer, and the source and the drain are coupled to the active layer through the ionized amorphous silicon layer.

Thin film transistor and method for manufacturing the same, array substrate, and display device

The present disclosure relates to a photodiode, a method for preparing the same, and an electronic device. The photodiode includes: a first electrode layer and a semiconductor structure that are stacked, a surface of the semiconductor structure away from the first electrode layer having a first concave-convex structure; and a second electrode layer arranged on a surface of the semiconductor structure away from the first electrode layer, a surface of the second electrode layer away from the first electrode layer having a second concave-convex structure.

Photodiode, method for preparing the same, and electronic device

The present disclosure discloses a photoelectric detector, a preparation method thereof, a display panel and a display device. The photoelectric detector includes a base, and a thin film transistor (TFT) and a photosensitive PIN device on the base, wherein the PIN device includes an I-type region that does not overlap with an orthographic projection of the TFT on the base; a first etching barrier layer covering a top surface of the I-type region; a first heavily doped region in contact with a side surface on a side, proximate to the TFT, of the I-type region; and a second heavily doped region in contact with a side surface on a side, away from the TFT, of the I-type region, the doping types of the first heavily doped region and the second heavily doped region being different from each other.

Photoelectric detector, preparation method thereof, display panel and display device

Growing community of inventors

Beijing, China

Chao Luo