Southwest Petroleum University

University of Electronic Science and Technology of China

Asm Technology Singapore Pte Ltd

Sichuan Sidaneng Environmental Protection Technology Co. Ltd.

Chao Liu

Jianchun Guo

Bo Gou

Xiao Li

Bo Zhang

Chi Chen

Jie Liu

Jun Qi

Dingjiang Guo

Jinsong He

Pingliang Tu

Qi Zhou

Zhi He

Shiyan Hao

Xiangting Cai

Ruimin Gao

Pak Lun Cheng

Feng Shen

Yong Wang

Ka Fai Fung

Nianxi Wang

Wanjun Chen

Yijun Shi

Jinqiao Wu

Xingtao Cui

Jun Ni

Guanhao Hu

Xiangzeng Wang

The invention discloses a testing device and method for evaluating effects of COreaction rate of acid rock plate. The testing device includes an acid fluid conveying unit, a COconveying unit, a mixing tank, a plate holder, a recycling fluid tank, and a vacuum pump. The mixing tank includes an acid fluid inlet, a COinlet, and a miscible fluid outlet. The acid fluid inlet is connected with the acid fluid conveying unit, the COinlet is connected with the COconveying unit, the miscible fluid outlet is connected with the plate holder, the plate holder is connected with the recycling fluid tank, and the recycling fluid tank is connected to the vacuum pump. The COconveying unit includes a COcylinder and a gas booster pump which is connected to the cylinder. The outlet of the pump is connected to the gas inlet of the mixing tank.

Testing method for evaluating the effect of CO2 reaction rate of acid rock plate

The invention discloses a method for treating wastewater generated in the spherical nickel hydroxide production process. The invention uses a combined membrane treatment process to systematically and specifically treat process wastewater produced at all stages of the spherical nickel hydroxide preparation process. The concentration of crude wastewater greatly reduces the treatment burden and energy consumption in the evaporation process with obvious environmental protection benefits. In addition, the membrane treatment system has the characteristics of easy control and simple operation. By virtue of the treatment method of the invention, the quality of some produced water can meet the standard of purified water.

Method for treating wastewater in the spherical nickel hydroxide production process

The invention discloses a plate holder for simulating flowing of multiphase fluids in fractures, comprising a rectangular box, provided with a fluid inlet and a fluid outlet at the left and right sides respectively, the fluid inlet is connected to a piston at the fluid inlet, the fluid outlet is connected to a piston at the fluid outlet, an internal flow channel of the piston is arranged as a flared guide groove, and the cavity between the pistons is a rock plate cavity; a pair of horizontally-overlapped rectangular rock plates are installed in the rock plate cavity, four sides parallel to the length direction of the rock plate are completely attached and covered with rubber, the outer side of the rubber is covered with steel plate, fastening screws are installed vertically on the four sides of the box that are directly opposite to the steel plate.

Plate holder for simulating flowing of multiphase fluids in fractures and an operating method thereof

A semiconductor die is bonded using epoxy onto a substrate supported on a heating platform. After preheating the substrate with the heating platform to a temperature of between 25&#xb0; C. and 60&#xb0; C., an epoxy dispenser deposits an epoxy dot onto the substrate before the semiconductor die is placed onto the epoxy dot with a pick head to thereby bond the semiconductor die onto the substrate.

Heating of a substrate for epoxy deposition

The present invention relates to the field of semiconductor switches, and relates more particularly to a GaN-based bidirectional switch device. The present invention provides a gate-controlled tunneling bidirectional switch device without Ohmic-contact, which avoids a series of negative effects (such as current collapse, incompatibility with traditional CMOS process) caused by the high temperature ohm annealing process. Each insulated gate structure near schottky-contact controls the band structure of the schottky-contact to change the working state of the device, realizing the bidirectional switch's ability of bidirectional conducting and blocking. Due to the only presence of schottky in this invention, no heavy elements such as gold is needed, and this device is compatible with traditional CMOS technology.

GaN-based bidirectional switch device

Growing community of inventors

Chengdu, China

Chao Liu