Taiwan Semiconductor Manufacturing Comp. Ltd.

Chao-Li Shih

Cheng-Yi Huang

Ching-Hou Su

Chih-Pin Wang

Yi-Zhen Chen

Tsung-Jen Yang

Hong-Hsing Chou

Yeh-Chieh Wang

Tsung-Min Lin

Chih-Shen Yang

Fang-Chi Chien

Chung-Nan Chen

Wolf Hung

Yen-Chen Liu

Ming-Hsing Li

Cheng-Hao Yu

In an embodiment, a magnetic assembly includes: an inner permeance annulus; and an outer permeance annulus connected to the inner permeance annulus via magnets, wherein the outer permeance annulus comprises a peak region with a thickness greater than other regions of the outer permeance annulus.

Permeance magnetic assembly

The present disclosure provides an interference filter, a lithography system incorporating an interference filter, and a method of fabricating an interference filter. The interference filter includes a transparent substrate having a front surface and a back surface, a plurality of alternating material layers formed over the front surface of the transparent substrate that form a bandpass filter, and an anti-reflective structure formed over the back surface of the transparent substrate. The alternating material layers alternate between a relatively high refractive index material and a relatively low refractive index material.

Systems and methods for a narrow band high transmittance interference filter

An apparatus and a method for forming alignment marks are disclosed. The method for forming alignment marks is a photolithography-free process and includes the following operations. A laser beam is provided. The laser beam is divided into a plurality of laser beams separated from each other. The plurality of laser beams is shaped into a plurality of patterned beams, so that the plurality of patterned beams is shaped with patterns corresponding to alignment marks. The plurality of patterned beams is projected onto a semiconductor wafer.

Apparatus and method for forming alignment marks

An ion implanter comprises a dissociation chamber in the ion implanter. The dissociation chamber has an input port for receiving a gas and an output port for outputting ions. A vacuum chamber surrounds the dissociation chamber. A plurality of rods or plates of magnetic material are located adjacent to the dissociation chamber on at least two sides of the dissociation chamber. A magnet is magnetically coupled to the plurality of rods or plates of magnetic material. A microwave source is provided for supplying microwaves to the dissociation chamber, so as to cause electron cyclotron resonance in the dissociation chamber to ionize the gas.

Plasma generation for ion implanter

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Jhudong, Taiwan

Chao-Li Shih