Hangzhou Dianzi University

Hangzhou Dianzi University Fuyang Electronic Information Research Institute Co., Ltd.

Hdu Fuyang Electronic Information Research Institute Co., Ltd.

Chao Le

Zhiqun Cheng

Guohua Liu

Xiebin Huang

Yelong Jian

Songye Wang

Ze Qin

It is provided a high-linearity GaN HEMT radio frequency power device for improving a transconductance under a large signal, including a substrate layer, a buffer layer, a second barrier layer, a channel layer, a first barrier layer, and a protection layer arranged in sequence. A source, a gate, and a drain are arranged on the protection layer. A first two-dimensional electron gas and a second two-dimensional electron gas are respectively formed between the channel layer and the first barrier layer and between the channel layer and the second barrier layer. The source, the gate, and the drain are configured to receive an external control signal to control motion of electrons in the first two-dimensional electron gas and the second two-dimensional electron gas formed by the channel layer. In case of the large signal, electrons in the second two-dimensional electron gas flow into the first two-dimensional electron gas.

High-linearity GaN HEMT radio frequency power device for improving transconductance under large signal

The present disclosure provides a reconfigurable power amplifier (PA) based on a PIN switch and a design method thereof. The reconfigurable PA based on a PIN switch includes an input port, an input matching circuit, the PIN switch, a gate bias circuit, a transistor, a drain bias circuit, an output matching circuit and an output port, where the input matching network includes an input end connected to a power input end, and an output end connected to a gate of the transistor, the gate bias circuit is connected in parallel with the gate, the drain bias circuit is connected in parallel with a drain, the drain of the transistor is connected to an input end of the output matching circuit, and an output end of the output matching circuit serves as a power output.

Reconfigurable power amplifier based on pin switch and design method thereof

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Zhejiang, China

Chao Le