Industrial Technology Research Institute

Other

Au Optronics Corporation

Chunghwa Picture Tubes, Ltd.

Hannstar Display Corporation

E Ink Holdings Inc.

Chi Mei Optoelectronics Corporation

Toppoly Optoelectronics Corporation

Quanta Display Inc.

Taiwan Tft Lcd Association

Chao-Jen Wang

Chih-Chia Chang

Li-Mei Chen

Jia-Chong Ho

Sheng-Po Wang

Hsueh-Chung Kao

Hua-Chi Cheng

Hsiao-Fen Wei

Jui-Chang Chuang

Kun-Lin Chuang

Chuan-Ya Hung

Bor-Chuan Chuang

Jen-Pin Yu

Chun-Yao Ou

Chien-Hsien Yu

Ming-Nan Hsiao

Jen-Po Lin

Lih-Ping Li

Hsin-Hsen Lu

Chiung-Hsun Hsieh

A functional module is applied in a front light module of a display device. The functional module includes a composite cover structure having a first plate and a second plate and a reflective display panel. The second plate is located between the first plate and the reflective display panel. At least one medium layer is located between the first plate of the composite cover structure and the reflective display panel. The refractive index of the medium layer is greater than or equal to 1 and is smaller than 1.474.

Functional module and display device having the same

A stretchable sensing device includes at least one first unit structure, at least one second unit structure and a stretchable material layer. The first unit structure includes a first substrate and a first sensing element layer, wherein the first substrate includes multiple first slits and multiple first distribution regions defined by the first slits. The first sensing element layer includes multiple first sensing electrodes being electrically isolated to each other and located on the first substrate. The second unit structure is located on the first unit structure and includes a second substrate and a second sensing element layer located on the second substrate. The stretchable material layer is located between the first unit structure and the second unit structure, and provides a changeable spacing between at least two of the first sensing electrodes located on adjacent first distribution regions. A sensing method of the stretchable sensing device is also provided.

Sensing method of sensing device and stretchable sensor device

According to an embodiment of the present disclosure, a structure constructed by a sheet includes a sheet body. The sheet body has a plurality of enclosed paths. A plurality of slits and connection portions are arranged along each enclosed path. Each connection portion is located between two adjacent slits. The sheet body is flexible. In an extended state, the slits form extended openings. At least one extended opening is a symmetric opening, so that the sheet body is extended to form a structure constructed by sheet. The structure constructed by sheet forms a stereoscopic curved surface, and the plurality of connection portions is located on a plurality of contours of the stereoscopic curved surface.

Structure constructed by sheet

According an embodiment of the disclosure, a flexible electronic device is provided. The flexible electronic device may include a flexible substrate, a device layer, and a barrier planarization layer. The device layer is located on the flexible substrate and has an upper surface. The upper surface has a maximum height difference less than or equal to 900 nm in a film stacking direction. The barrier planarization layer covers the device layer and the flexible substrate and has a covering surface and a planarization surface opposite to the covering surface. The barrier planarization layer has a water vapor transmission rate lower than or equal to 10g/m-day.

Flexible electronic device having barrier planarization layer including nitrogen-rich region and oxygen-rich region

According to an embodiment of the present disclosure, a chip package including at least one chip, a first encapsulation layer, a redistribution layer, and a second encapsulation layer is provided. The at least one chip has an active surface, a back surface opposite to the active surface, and sidewall surfaces connecting the active surface and the back surface. The first encapsulation layer covers the sidewall surfaces. The first encapsulation layer has a first surface and a second surface opposite to the first surface. The redistribution layer is disposed on the active surface and the first surface, and electrically connected to the at least one chip. The second encapsulation layer is disposed on the back surface and the second surface. A thermal expansion coefficient of the second encapsulation layer is less than a thermal expansion coefficient of the first encapsulation layer. Chip packaging methods are also provided.

Chip package and chip packaging method

According to an embodiment of the present disclosure, a flexible electronic device may include a unit structure including a substrate unit and a wiring structure. The substrate unit has slits to divide connecting portions between respective ends of two slits and wiring regions arranged outwardly from at least one unit center sequentially. The wiring structure is disposed on the substrate unit and includes wirings distributed in the wiring regions. Each wiring includes circumferential portions and radial portions connected between the circumferential portions. The radial portion connected to a first end of each circumferential portion extends toward the unit center from the first end. Each circumferential portion includes a first section and a second section. The first section is closer to the first end and has greater anti-stretching ability than the second section.

Flexible electronic device

A flexible substrate repair structure, a manufacturing method thereof, and an inspection and repair method of a flexible substrate are provided. The flexible substrate repair structure includes a flexible substrate and at least one repair layer. The flexible substrate has a regular recess. The at least one repair layer is located on the flexible substrate and is completely filled in the regular recess. The material of the repair layer includes a polysilazane compound having the unit shown in formula (1) below, wherein R, Rand Rare respectively hydrogen, a Cto Csubstituted alkyl group, an unsubstituted alkyl group, an alkenyl group, or an aromatic group.

Flexible substrate repair structure, manufacturing method thereof, and inspection and repair method of flexible substrate

A reflector element is provided for a lighting device and includes a light transmission/reflection component that includes a light conductor containing therein light diffusion particles. The light transmission/reflection component includes a light entrance section, a light transmission/reflection section, and a light emission section. The reflector element is coupled to a light-emitting diode (LED) lighting unit, or a heat dissipation element, or a cover. The light entrance section of the reflector element is set in front of the LED lighting unit and the light transmission/reflection section is set at an opposite side to the light entrance section in order to redirect an incident light to the light emission section. Due to the effect provided by the light diffusion particles for refraction, light is uniformly distributed and emitted through the cover.

Reflector element of lighting unit

Disclosed is an assembly of light-emitting units, which is applicable to a lighting device that comprises a plurality of light-emitting elements respectively mounted to heat dissipation units. The light-emitting elements give off light beams that project outward through a light-transmitting hood. One surface of the light-transmitting hood is provided with a light diffusion layer featuring light refraction. As such, the light beams emitting from the light-emitting elements are made converging on a light incidence area, which, together with the feature of light spreading of the light-transmitting hood, can spread off and thus homogenize the light beams to form a surface source, and can also concentrate the light energy of the lighting device to enhance the brightness. The lighting device can be applied to any lighting facility.

Lighting device capable of suppressing occurrence of ovelap of multiple shades

A method of fabricating an active layer thin film by a metal-chalcogenide precursor solution is provided, including the steps of: synthesizing a metal-chalcogenide precursor containing benzyl or benzyl derivative; dissolving the precursor in a solvent to produce a precursor solution, wherein a chalcogen element or compound can be added to the precursor solution to adjust the molar ratio of metal ion to chalcogen; and then applying the precursor solution onto a substrate in a specific coating manner, to form a film of the metal-chalcogenide after a curing process. Thereby, the existing method wherein an amorphous silicon active layer film is fabricated by plasma enhanced chemical vapor deposition (PECVD) is replaced.

Method of fabricating active layer thin film by metal chalcogenide precursor solution

A new dielectric material composition with high dielectric constant and low dielectric loss, which includes a quaternary metallic oxide having a pervoskite structure and represented by a general formula, BaMTiMO. It is suitable for Gbit memory devices, embedded capacitance devices in multilayered structures, and modulable capacitors for high frequency devices.

Dielectric material compositions with high dielectric constant and low dielectric loss

A dielectric material composition including a metal oxide represented by a general formula, YMMnMO. Mis Y, Ho, Er, Yb, Tm, or Lu. Mis Ti, Zr, V, Mo, Mg, Cu, or Zn. X is a number of 0 to 1. Y is a number of 0 to 1. The metal oxide is of high dielectric constant and has the properties of ferroelectricity, piezoelectricity, and pyroelectricity.

Dielectric material compositions

The invention provides a fast-cured sol material, which is produced by hydrolysis and condensation of the following starting materials: 2-60 parts by weight of a silicon alkoxide; 20-98 parts by weight of an alcohol; 0.5-50 parts by weight of an aqueous media; 0.0001-10 parts by weight of a base; 0.001-30 parts by weight of at least one additive; and optionally 0.0001-10 parts by weight of an acid. A coating of the sol material according to the invention can be directly cured (without aging) to obtain a microporous dielectric film without shrinkage or cracks.

Growing community of inventors

Hsinchu, Taiwan

Chao-Jen Wang