Macronix International Co., Ltd.

Taiwan Semiconductor Manufacturing Comp. Ltd.

International Business Machines Corporation

Mediatek Corporation

Chao-I Wu

Yu-Ming Lin

Ming-Hsiu Lee

Tzu-Hsuan Hsu

Sai-Hooi Yeong

Ming-Chang Kuo

Hsiang-Lan Lung

Han-Jong Chia

Bo-Feng Young

Win-San Khwa

Yen-Hao Shih

Tzu-Hsiang Su

Tien-Yen Wang

Ming Hsiu Lee

Erh-Kun Lai

Shih-Lien Linus Lu

Hsiang-Pang Li

Dai-Ying Lee

Chung H Lam

Hang-Ting Lue

Sheng-Chen Wang

Yu-Hsuan Lin

Ya-Chin King

Tzu Hsuan Hsu

Matthew Joseph Breitwisch

Chih-Yu Chang

Kuang Yeu Hsieh

Kuang-Yeu Hsieh

Ming-Hsiang Hsueh

Chao-Lun Yu

Chun-Hsiung Hung

Meng-Fan Chang

Mauricio Manfrini

Bipin Rajendran

Chia-Yun Cheng

Wei-Chih Chien

Roger W Cheek

Hao-Ming Lien

Simone Raoux

SangBum Kim

Huai-Yu Cheng

Yu-Ming Chang

Chieh-Fang Chen

Sai-hooi Yeong

Sheng-Jen Wang

Ming-Long Wu

Win San Khwa

Cheng-Hsing Hsu

Pei-Ying Du

Ming-Hsin Lee

Hsiang-Pan Li

A memory cell includes a read word line extending in a first direction, a write transistor, and a read transistor coupled to the write transistor. The read transistor includes a ferroelectric layer, a drain terminal of the read transistor directly connected to the read word line, and a source terminal of the read transistor coupled to a first node. The write transistor is configured to adjust a polarization state of the read transistor, the polarization state corresponding to a stored data value of the memory cell.

Memory cell and method of operating the same

A semiconductor chip including a semiconductor substrate, an interconnect structure and memory devices is provided. The semiconductor substrate includes first transistors, and the first transistors are negative capacitance field effect transistors. The interconnect structure is disposed over the semiconductor substrate and electrically connected to the first transistors, and the interconnect structure includes stacked interlayer dielectric layers, interconnect wirings, and second transistors embedded in the stacked interlayer dielectric layers. The memory devices are embedded in the stacked interlayer dielectric layers and electrically connected to the second transistors.

Semiconductor chip

A disclosed memory structure includes a first memory region including a first memory array of SRAM memory devices, a second memory region including a second memory array of 1T1C memory devices, and a third memory region including a third memory array of FeFET memory devices. The memory structure further includes at least one data bus laterally extending across the first memory region, the second memory region, and third memory region and configured to provide data transfer among the first memory array, the second memory array, and the third memory array. The memory structure further includes a plurality of peripheral circuit devices formed at a semiconductor material layer of the memory structure, the peripheral circuit devices configured to control the first memory array, the second memory array, and the third memory array. At least one of the second memory array and the third memory array may be a 3-dimensional memory array.

Memory chiplet having multiple arrays of memory devices and methods of forming the same

A memory device includes the following items. A substrate. A bottom electrode disposed over the substrate. An insulating layer disposed over the bottom electrode, the insulating layer having a through hole defined in the insulating layer. A heater disposed in the through hole. A phase change material layer disposed over the heater. A selector layer disposed over the phase change material layer. An intermediate layer disposed over the through hole. Also, a metal layer disposed over the selector layer. The metal layer is wider than the phase change material layer.

PCRAM structure

An integrated chip including a substrate. A gate layer is over the substrate. A channel layer is over the substrate and vertically spaced apart from the gate layer. A ferroelectric layer is directly between the channel layer and the gate layer. A pair of source/drain electrodes are laterally spaced apart over the channel layer. A plurality of charge traps are along an interface between the ferroelectric layer and the channel layer.

Memory device having interface charge traps

A memory device and a programming method of the memory device are provided. The memory device includes a bottom electrode, a heater, a phase change layer and a top electrode. The heater is disposed on the bottom electrode, and includes heat conducting materials different from one another in terms of electrical resistivity. A first one of the heat conducting materials has a periphery wall portion and a bottom plate portion connected to and surrounded by the periphery wall portion. A second one of the heat conducting materials is disposed on the bottom plate portion of the first one of the heat conducting materials, and laterally surrounded by the periphery wall portion of the first one of the heat conducting materials. The phase change layer is disposed on the heater and in contact with the heat conducting materials. The top electrode is disposed on the phase change layer.

Memory device and formation method thereof

A memory device and a manufacturing method are provided. The memory device includes a substrate, a transistor, and a memory cell. The substrate has a semiconductor device and a dielectric structure disposed on the semiconductor device. The transistor is disposed over the dielectric structure and is electrically coupled with the semiconductor device. The semiconductor device includes a gate, a channel layer, source drain regions, and a stack of a gate dielectric layer and a first ferroelectric layer. The gate and the source and drain regions are disposed over the dielectric structure. The channel layer is located between the source and drain regions. The stack of the gate dielectric layer and the first ferroelectric layer is disposed between the gate and the channel layer. The memory cell is disposed over the transistor and is electrically connected to one of the source and drain regions. The memory cell includes a ferromagnetic layer or a second ferroelectric layer.

Memory device structure and manufacturing method thereof

Memory device comprising heater of different heat conducting materials and programming method thereof

A memory device and method of forming the same are provided. The memory device includes a first memory cell disposed over a substrate. The first memory cell includes a transistor and a data storage structure coupled to the transistor. The transistor includes a gate pillar structure, a channel layer laterally wrapping around the gate pillar structure, a source electrode surrounding the channel layer, and a drain electrode surrounding the channel layer. The drain electrode is separated from the source electrode a dielectric layer therebetween. The data storage structure includes a data storage layer surrounding the channel layer and sandwiched between a first electrode and a second electrode. The drain electrode of the transistor and the first electrode of the data storage structure share a common conductive layer.

Memory device and method of forming the same

A semiconductor package includes a processor die, a storage module and a package substrate. The storage module includes an array of cache units and an array of memory units stacked over one another, and electrically connected to the processor die, wherein the array of cache units is configured to hold copies of data stored in the array of memory units and frequently used by the processor die. The package substrate is on which the processor die and the storage module are disposed.

Semiconductor package

Memory devices and methods of forming the same are provided. A memory device includes a substrate, a first conductive layer, a phase change layer, a selector layer and a second conductive layer. The first conductive layer is disposed over the substrate. The phase change layer is disposed over the first conductive layer. The selector layer is disposed between the phase change layer and the first conductive layer. The second conductive layer is disposed over the phase change layer. In some embodiments, at least one of the phase change layer and the selector layer has a narrow-middle profile.

Memory devices and methods of forming the same

A context-based adaptive binary arithmetic coding (CABAC) decoder includes a bin decode circuit and a context update circuit. The bin decode circuit supports decoding of multiple bins in one cycle. The multiple bins include a first bin and a second bin. The bin decode circuit generates a bin value of the first bin according to a first set of multiple contexts, a first range and a first offset, and generates one bin value of the second bin according to a second set of multiple contexts, a second range and a second offset. The context update circuit updates the first set of multiple contexts in response to the bin value of the first bin, to generate a first set of multiple updated contexts, and updates the second set of multiple contexts in response to said one bin value of the second bin, to generate a second set of multiple updated contexts.

Context-based adaptive binary arithmetic coding decoder capable of decoding multiple bins in one cycle and associated decoding method

A memory device includes a multi-layer stack, a plurality of channel layers and a plurality of ferroelectric layers. The multi-layer stack is disposed on a substrate and includes a plurality of gate layers and a plurality of dielectric layers stacked alternately. The plurality of channel layers penetrate through the multi-layer stack and are laterally spaced apart from each other, wherein the plurality of channel layers include a first channel layer and a second channel layer, and a first electron mobility of the first channel layer is different from a second electron mobility of the second channel layer. Each of the plurality of channel layers are spaced apart from the multi-layer stack by one of the plurality of ferroelectric layers, respectively.

Provided are a memory device and a method of forming the same. The memory device includes a substrate, a layer stack, and a plurality of composite pillar structures. The layer stack is disposed on the substrate. The layer stack includes a plurality of conductive layers and a plurality of dielectric layers stacked alternately. The composite pillar structures respectively penetrate through the layer stack. Each composite pillar structure includes a dielectric pillar; a pair of conductive pillars penetrating through the dielectric pillar and electrically isolated from each other through a portion of the dielectric pillar; a channel layer covering both sides of the dielectric pillar and the pair of conductive pillars; a ferroelectric layer disposed between the channel layer and the layer stack; and a buffer layer disposed between the channel layer and the ferroelectric layer.

Memory array

A memory device and a manufacturing method thereof are provided. The memory device includes word lines, channel layer, gate dielectric layers, a conductive pillar and a storage pillar. The word lines extend along a first direction over a substrate, and are vertically spaced apart from one another. The channel layers respectively line along a sidewall of one of the word lines. The gate dielectric layers respectively line between one of the word lines and one of the channel layers. The conductive pillar and the storage pillar penetrate through the channel layers. The storage pillar includes an inner electrode, a switching layer and an outer electrode. The switching layer wraps around the inner electrode. The outer electrode laterally surrounds the switching layer, and includes annulus portions vertically spaced apart from one another and each in lateral contact with a corresponding one of the channel layers.

Memory device and manufacturing method thereof

Growing community of inventors

Hsinchu, Taiwan

Chao-I Wu