United Microelectronics Corp.

Chao-Hung Lin

Jyh-Shyang Jenq

Shih-Hung Tsai

Li-Wei Feng

Ssu-I Fu

Chih-Kai Hsu

Yu-Hsiang Hung

Shih-Fang Hong

Hon-Huei Liu

Chien-Ting Lin

En-Chiuan Liou

Chih-Sen Huang

Chung-Yi Chiu

Ying-Chiao Wang

Yu-Cheng Tung

Yi-Wei Chen

Ching-Wen Hung

Yi-Hui Lee

Jia-Rong Wu

Ying-Cheng Liu

Ying-Tsung Chen

Nan-Yuan Huang

Yi-Kuan Wu

Chen-Ming Huang

An-Chi Liu

Ching-Ling Lin

Yi-Wen Chen

Wei-Chi Cheng

Li-Chiang Chen

Chia-Hsun Tseng

Chih-Wei Wu

Mei-Chen Chen

A semiconductor device includes: a substrate having a first region and a second region; a first fin-shaped structure on the first region and a second fin-shaped structure on the second region, wherein each of the first fin-shaped structure and the second fin-shaped structure comprises a top portion and a bottom portion; a first doped layer around the bottom portion of the first fin-shaped structure; a second doped layer around the bottom portion of the second fin-shaped structure; a first liner on the first doped layer; and a second liner on the second doped layer.

Semiconductor device

A method for fabricating semiconductor device includes the steps of: providing a substrate having a first region and a second region; forming a first fin-shaped structure on the first region and a second fin-shaped structure on the second region; forming a first spacer adjacent to the first fin-shaped structure and a second spacer adjacent to the second fin-shaped structure; and using the first spacer and the second spacer as mask to remove part of the substrate for forming a third fin-shaped structure on the first region and a fourth fin-shaped structure on the second region, in which the third fin-shaped structure includes a first top portion and a first bottom portion and the fourth fin-shaped structure includes a second top portion and a second bottom portion.

Method for fabricating semiconductor device

A semiconductor device includes a substrate, a first insulating structure and a gate structure. The substrate includes at least two fin structures protruding from a top surface of the substrate, the substrate includes a first recess and a second recess under the first recess, and the first recess and the second recess are disposed between the fin structures, in which a width of the first recess is larger than a width of the second recess, and the first recess and the second recess form a step structure. The first insulating structure fills the second recess. The gate structure is disposed on the first insulating structure, in which the first recess and the second recess are filled up with the gate structure and the first insulating structure.

Semiconductor device having gate structure

A semiconductor device and method of forming the same, the semiconductor device includes a first and second fin shaped structures, a first and second gate structures and a first and second plugs. The first and second fin shaped structures are disposed on a first region and a second region of a substrate and the first and second gate structure are disposed across the first and second fin shaped structures, respectively. A dielectric layer is disposed on the substrate, covering the first and second gate structure. The first and second plugs are disposed in the dielectric layer, wherein the first plug is electrically connected first source/drain regions adjacent to the first gate structure and contacts sidewalls of the first gate structure, and the second plug is electrically connected to second source/drain regions adjacent to the second gate structure and not contacting sidewalls of the second gate structure.

Method of forming semiconductor device

A method for fabricating semiconductor device includes the steps of: providing a substrate having a first fin-shaped structure thereon; forming a spacer adjacent to the first fin-shaped structure; using the spacer as mask to remove part of the substrate for forming a second fin-shaped structure, wherein the second fin-shaped structure comprises a top portion and a bottom portion; and forming a doped portion in the bottom portion of the second fin-shaped structure.

A method for fabricating a semiconductor device having a gate structure includes forming a substrate including at least two fin structures protruding from a top surface of the substrate, the substrate including a first recess and a second recess disposed under the first recess, and the first recess and the second recess being disposed between the fin structures, wherein a width of the first recess is larger than a width of the second recess, and the first recess and the second recess form a step structure; forming an insulating structure in the second recess; and forming the gate structure on the insulating structure, wherein the first recess and the second recess are filled up with the gate structure and the insulating structure.

Method for fabricating semiconductor device having gate structure

A semiconductor device includes: a fin-shaped structure on a substrate, in which the fin-shaped structure includes a top portion and a bottom portion; a doped layer around the bottom portion of the fin-shaped structure; a first liner on the doped layer, and a second liner on the top portion and the bottom portion of the fin-shaped structure. Preferably, the first liner and the second liner are made of different material.

Semiconductor device and method for fabricating the same

The present invention provides a method of forming a semiconductor structure. A wafer with a dicing region is provided, the dicing region comprises a central region, a middle region surrounds the central region, and a peripheral region surrounds the middle region. Next, an aligning mark is formed in the dicing region, wherein the aligning mark is a mirror symmetrical pattern and comprises a plurality of second patterns in the middle region and a plurality of third patterns in the third region, each third pattern has a plurality of lines and the lines comprises a plurality of inner lines which are formed by a sidewall image transfer (SIT) process.

Method of forming semiconductor structure with aligning mark in dicing region

A semiconductor device includes a silicon substrate, a fin shaped structure and a shallow trench isolation. The fin shaped structure includes a top portion which protrudes from a bottom surface of the fin shaped structure and the fin shaped structure is directly disposed on the silicon substrate. The bottom surface of the fin shaped structure covers an entire top surface of the silicon substrate. The fin shaped structure further includes a silicon germanium (SiGe) layer extending within the fin shaped structure and occupying the whole top portion of the shaped structure. The fin shaped structure is a semiconductor fin shaped structure, and the material of the silicon substrate is different from the material of the silicon germanium layer The shallow trench isolation is disposed on the top portion and the bottom surface of the fin shaped structure.

Semiconductor device including fin shaped structure including silicon germanium layer

A method for fabricating semiconductor device is disclosed. The method includes the steps of: providing a substrate having a first fin-shaped structure thereon; forming a spacer adjacent to the first fin-shaped structure; using the spacer as mask to remove part of the substrate for forming a second fin-shaped structure, in which the second fin-shaped structure comprises a top portion and a bottom portion; and forming a doped portion in the bottom portion of the second fin-shaped structure.

The invention provides a method for fabricating a fin field effect transistor (FinFET), comprising: providing a substrate having a logic region and a large region; forming a plurality of fin structures in the logic region by removing a portion of the substrate in the logic region; forming an oxide layer on the substrate filling in-between the fin structures in the logic region; forming an first epitaxial structure in the large region by removing a portion of the substrate in the large region; exposing a portion of the fin structures and a portion of the epitaxial structure by removing a portion of the oxide layer; and forming a gate electrode on portions of the fin structures.

Method for fabricating a Fin field effect transistor (FinFET)

Semiconductor device and method of forming the same

A semiconductor device and a method of fabricating the same, the semiconductor device includes a silicon substrate, a fin shaped structure and a shallow trench isolation. The fin shaped structure is disposed on the silicon substrate and includes a silicon germanium (SiGe) layer extending from bottom to top in the fin shaped structure. The shallow trench isolation covers a bottom portion of the fin shaped structure.

Method for fabricating semiconductor device including fin shaped structure

A method for fabricating semiconductor device includes the steps of: providing a substrate having a first region, a second region, and a third region; forming a plurality of spacers on the first region, the second region, and the third region; forming a first patterned mask to cover the spacers on the first region and the second region; and removing the spacers on the third region.

Growing community of inventors

Changhua County, Taiwan

Chao-Hung Lin