University of California

Chao-Hui Yeh

Kaustav Banerjee

Wei Cao

Arnab Pal

A hybrid switch and memory cell includes a transistor device that has an atomically-thin semiconductor material channel, source/drain electrodes, and gate dielectric. The cell includes a resistive-random-access-memory having a thin conductive edge and a 2D insulator layer over the thin conductive edge, wherein the 2D insulator layer extends over the semiconductor channel and serves as the gate dielectric in the transistor device.

Growing community of inventors

Goleta, CA, United States of America

Chao-Hui Yeh