Taiwan Semiconductor Manufacturing Comp. Ltd.

E Ink Holdings Inc.

Chao-Hsuan Chen

Yuan-Sheng Huang

Yu-Hsien Lin

Hsiao-Wen Zan

Chuang-Chuang Tsai

Ming-Chia Tai

Shun-Hui Yang

Ryan Chia-Jen Chen

Wei-Tsung Chen

Cheng-Hang Hsu

Ryan Chia-jen Chen

Zong-Xuan Li

Ching-Fu Lin

A method includes fabricating a semiconductor device, wherein the method includes depositing a coating layer on a first region and a second region under a loading condition such that a height of the coating layer in the first region is greater than a height of the coating layer in the second region. The method also includes applying processing gas to the coating layer to remove an upper portion of the coating layer such that a height of the coating layer in the first region is a same as a height of the coating layer in the second region.

Fin field-effect transistor and method of forming the same

A method includes forming a polymer layer on a patterned photo resist. The polymer layer extends into an opening in the patterned photo resist. The polymer layer is etched to expose the patterned photo resist. The polymer layer and a top Bottom Anti-Reflective Coating (BARC) are etched to pattern the top BARC, in which the patterned photo resist is used as an etching mask. The top BARC is used as an etching mask to etching an underlying layer.

Ultra narrow trench patterning with dry plasma etching

A proximity sensor includes a substrate, a light source, a finger electrode, an active layer, and a transparent electrode layer. The substrate has opposite top and bottom surfaces. The light source faces toward the bottom surface of the substrate. The finger electrode is located on the top surface of the substrate, and has finger portions and gaps between every two adjacent finger portions. The active layer covers the finger electrode, and is located in the gaps. The transparent electrode layer is located on the active layer. When the light source emits light, the light through the gaps sequentially passes through the active layer and the transparent electrode layer onto a reflective surface. The light is reflected by the reflective surface to form reflected light, and the reflected light passes through the transparent electrode layer and is received by the active layer.

Proximity sensor and operation method thereof

An active device is disposed on a substrate and includes a gate, an organic active layer, a gate insulation layer, a plurality of crystal induced structures, a source and a drain. The gate insulation layer is disposed between the gate and the organic active layer. The crystal induced structures distribute in the organic active layer and directly contact with the substrate or the gate insulation layer. The source and the drain are disposed on two opposite sides of the organic active layer, wherein a portion of the organic active layer is exposed between the source and the drain.

Active device

Ultra narrow trench patterning using plasma etching

Growing community of inventors

Hsinchu, Taiwan

Chao-Hsuan Chen