Xidian University

Chao Han

Yuming Zhang

Hui Guo

Keji Zhang

Hao Yuan

Xiaoyan Tang

Yanqiang Shi

Qingwen Song

Yujuan Zhang

A junction barrier schottky (JBS) diode is provided and includes: a bottom metal layer, a N-type substrate layer and a N-type epitaxial layer sequentially arranged in that order from bottom to top, P-type ion injection regions are disposed on an upper surface of the N-type epitaxial layer, distances of the P-type ion injection regions are gradually increased along a direction from an edge to a center of the JBS diode; an isolation dielectric layer is arranged on a periphery of the upper surface of the N-type epitaxial layer, an top metal layer is arranged on the upper surface of the N-type epitaxial layer and an upper surface of the isolation dielectric layer and further is in contact with the P-type ion injection regions. The JBS diode can effectively inhibit an occurrence of local electromigration and improve a device reliability.

Junction barrier schottky diode

A layer I vanadium-doped PIN-type nuclear battery, including from top to bottom a radioisotope source layer(), a p-type ohm contact electrode(), a SiOpassivation layer(), a SiOcompact insulation layer(), a p-type SiC epitaxial layer(), an n-type SiC epitaxial layer(), an n-type SiC substrate() and an n-type ohm contact electrode(). The doping density of the p-type SiC epitaxial layer() is 1&#xd7;10to 5&#xd7;10cm, the doping density of the n-type SiC substrate() is 1&#xd7;10to 7&#xd7;10cm. The n-type SiC epitaxial layer() is a low-doped layer I formed by injecting vanadium ions, with the doping density thereof being 1&#xd7;10to 5&#xd7;10cm. Also provided is a preparation method for a layer I vanadium-doped PIN-type nuclear battery. The present invention solves the problem that the doping density of layer I of the exiting SiC PIN-type nuclear battery is high.

I-layer vanadium-doped PIN type nuclear battery and the preparation process thereof

Growing community of inventors

Xi'an, China

Chao Han