Shanghai Huali Microelectronics Corporation

Lear Corporation

Huawei Device Co., Ltd.

Tongji University

Aptiv Electrical Centers (shanghai) Co., Ltd.

Chao Fang

Hsusheng Chang

Yukun Lv

Zaifeng Tang

Zhang Gao

Yuanqiang Ni

Zengliang Yu

Anyang Zhang

Wenhai Chu

Dongmei Li

Jiayun Chen

Jianwei Guo

Shunke Ding

Naiyun Gao

Zhaofei Ma

Selvin Berlin Anand

Wenzheng Ma

Weiguo Jiang

A electrical pass-through includes a housing and a cap assembly. The housing has a cap lock and a cable opening that extends through the housing and that defines a cable axis. The cable opening has a non-circular cross-sectional shape when viewed perpendicularly relative to the cable axis. The cap assembly has a cap base and a cap catch. A cap opening extends through the cap base and the cable axis extends through the cap opening. The cap assembly movable relative to the housing to a locked position wherein the cap catch engages the cap lock to retain the cap assembly in the locked position relative to the housing.

Housing for an electrical pass-through

An embodiment of the present invention discloses a screen locking method, including: displaying a first lock screen interface in a lock screen state; in response to a preset gesture operation input by a user on the first lock screen interface, displaying a first lock screen configuration interface in the lock screen state, wherein the first lock screen configuration interface is provided with a first function option for commenting on a current lock screen background, and the first function option is represented by a heart-shaped icon; in response to an operation that is performed by the user for triggering the first function option, identifying the first picture as a picture fond of by the user. Thus, increasing variability of a lock screen background, improving switching efficiency, and enhancing a feeling of freshness of a user on a lock screen.

Screen locking method and mobile terminal

An electrical connector comprises: a housing provided with a locking portion; a locking lever, which has a first arm and a second arm connected to opposite sides of the housing, and a beam portion extending between the first arm and the second arm, with a channel being provided in the beam portion; and a connector position assurance member, the connector position assurance member having a locking edge, the connector position assurance member being inserted into the channel from an open end of the channel, and the connector position assurance member having a pre-installed position and a locked position in the channel, wherein when the locking lever pivots to the second position and the connector position assurance member enters into the locked position, the locking edge abuts against the locking portion in the channel, thereby locking a rotational motion of the locking lever.

Electrical connector having position holder

Disclosed is a method for controlling a chlorinated nitrogen-containing disinfection by-product in water, including the following steps: firstly, the pH value of a water sample is controlled, ultraviolet irradiation treatment is used and a persulfate or hydrogen persulfate is added at the same time, then chlorination disinfection is carried out, and finally, aeration treatment is carried out, so that a water sample from which the chlorinated nitrogen-containing disinfection by-product in water is removed and obtained. The method can effectively control the formation of chlorinated N-DBPs, and can effectively reduce the amount of trichloromethane in the subsequent chlorination disinfection process.

Method for controlling chlorinated nitrogen-containing disinfection by-product in water

A method for etching a polysilicon gate is disclosed, wherein the polysilicon gate includes an undoped polysilicon portion and a doped polysilicon portion that is situated on the undoped polysilicon portion. The method includes: obtaining a thickness of the undoped polysilicon portion and a thickness of the doped polysilicon portion by using an optical linewidth measurement device; and etching the undoped polysilicon portion and the doped polysilicon portion by using two respective steps with different parameters, respective etching time for the undoped polysilicon portion and the doped polysilicon portion of every wafer being adjusted in real time by using an advanced process control system. This method enables the doped and undoped polysilicon portions of each polysilicon gate on every wafer to have substantially consistent profiles between each other.

Method for etching polysilicon gate

The present invention discloses a method for reducing the morphological difference between N-doped and undoped poly-silicon gates after etching, comprising the following sequential steps: depositing a hard mask layer on a substrate template having N-doped poly-silicon and undoped poly-silicon to form an N-doped poly-silicon hard mask layer and an undoped poly-silicon hard mask layer respectively, and etching the undoped poly-silicon hard mask layer to make a thickness difference between the N-doped poly-silicon hard mask layer and the undoped poly-silicon hard mask layer; depositing an anti-reflection layer, and etching according to a predetermined pattern until exposing the N-doped poly-silicon, wherein when the N-doped poly-silicon is exposed, the undoped poly-silicon is etched to a certain degree; and removing residuals on the surface of the above formed structure, and etching to form an N-doped poly-silicon gate and an undoped poly-silicon gate, respectively.

Method for reducing morphological difference between N-doped and undoped polysilicon gates after etching

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Shanghai, China

Chao Fang