Boe Technology Group Co., Ltd.

Beijing Boe Display Technology Co., Ltd.

Chongqing Boe Optoelectronics Technology Co., Ltd.

Fuzhou Boe Optoelectronics Technology Co., Ltd.

New H3c Technologies Co., Ltd.

Chao Fan

Ming Lei Zhang

Yang Wang

Bo Liu

Zheng Liu

Zhonghao Huang

Xiaowei Liu

Zhaohui Hao

Guoqiang Zhang

Jaemoon Chung

Woong Sun Yoon

Zhongfei Bai

Yabin An

Qihui Wang

Liquan Cui

Dongzhen Jin

Rongge Cui

Manman Wang

Hai Wang

The present disclosure provides a thin film transistor and a fabrication method thereof, and an array substrate. The thin film transistor formed on a base substrate, the thin film transistor includes: an active layer; a first signal metal layer, provided on a surface of the active layer facing the base substrate; a second signal metal layer, provided on a surface of the active layer facing away from the first signal metal layer, wherein, the active layer includes a conductive channel formation region, and the second signal metal layer does not cover the conductive channel formation region of the active layer.

Thin film transistor, fabrication method therefor, and array substrate

An array substrate and a fabrication method thereof are provided. The array substrate comprises a plurality of wiring regions (S-S') disposed in a non-display region, a plurality of signal lines () is provided in the wiring regions (S-S&#x2032;), at least part of the signal lines () within each of the wiring regions (S-S&#x2032;) are respectively formed by connecting conducting wires () located in different layers in series; and any two of the signal lines () within a same wiring region (S-S&#x2032;) have a resistance difference within a threshold range. The same signal line () is disposed in different layers, so that the signal line () is bent in a plane perpendicular to the array substrate, which achieves of the extension of a length of the signal line (), and thus increases the length and resistance of the signal line (), the resistance of which needs to be increased. At the same time, the width taken by the signal line () is not increased, so that the signal line () has a greater density in the wiring region (S-S&#x2032;), which achieves the reduction in the number of drivers and the fabrication costs, and meanwhile avoids a problem that it is not conducive to realize a narrow frame due to a large area of the non-display region, resulted from a large area taken by a single signal line ().

Array substrate and fabrication method thereof

The present application discloses a thin film transistor including a base substrate; an active layer on the base substrate having a first semiconductor region, a second semiconductor region, and a plurality of semiconductor bridges each of which connecting the first semiconductor region and the second semiconductor region; the plurality of semiconductor bridges spaced apart from each other; the active layer being made of a material including M1ON, wherein M1 is a single metal or a combination of metals, a&#x3e;0, and b&#x2265;0; an etch stop layer on a side of the active layer distal to the base substrate; the first semiconductor region having a first non-overlapping portion, a projection of which is outside that of the etch stop layer in plan view of the base substrate; the second semiconductor region having a second non-overlapping portion, a projection of which is outside that of the etch stop layer in plan view of the base substrate; a first electrode on a side of the first non-overlapping portion distal to the base substrate; and a second electrode on a side of the second non-overlapping portion distal to the base substrate.

Thin film transistor, gate drive on array and display apparatus having the same, and fabricating method thereof

A display panel and a display device are provided to better protect a metal connecting line area in a peripheral wiring region, improve the protection degree and prevent the wire breakage. The display panel includes a gate insulating layer () disposed on a gate metal layer (); and a protective layer (), a passivation layer () and an indium tin oxide (ITO) coating layer () disposed on the gate insulating layer in sequence. The display panel and the display device can increase the film thickness in the peripheral wiring region, and hence can protect the entire peripheral wiring region and particularly the metal connecting line area exposed outside a color filter panel and improve the protection degree.

Display panel with metal connecting line area including protective layer and display device

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Beijing, China

Chao Fan