Shenzhen China Star Optoelectronics Technology Co., Ltd.

Tencent Technology (shenzhen) Company Limited

Shenzhen Technology Star Optoelectronics Technology Co., Ltd.

Chao Dai

Juncheng Xiao

Jing Lv

Yongfang Shi

Anlin Gao

Xunan Mao

Shangcao Cao

Chenchen Gu

Jian He

Xun Zhang

Haibo Deng

Jingchang Chen

Licai Guo

Chang Yeh Lee

Tzu-Chieh Lai

The application discloses video data redundancy control methods and apparatuses. Video packet redundancy control information is determined according to packet loss at a reception apparatus. The video packet redundancy control information is received from the reception apparatus. Video data is encoded according to the video packet redundancy control information to obtain encoded video data of a plurality of frames by a transmission apparatus. A frame-level redundancy budget is allocated for one of the plurality of frames according to the video packet redundancy control information. Further, the one of the plurality of frames is packetized according to the frame-level redundancy budget to generate a packetized frame. Redundancy coding is performed on the packetized frame to generate video packets including data packets and redundant packets for transmission to the reception apparatus.

Method and apparatus for encoding packets using video data redundancy control information

Video data processing method and apparatus are provided. The method includes: encoding, by an encoder side, obtained original video data according to a hierarchical P-frame prediction HPP structure to obtain an HPP bitstream; redundancy-coding the HPP bitstream according to a forward error correction FEC code, redundancy packet quantities in frames in the HPP bitstream progressively decreasing from lower to higher temporal layers to which the frames belong in the HPP structure; and sorting the frames in the redundancy-coded HPP bitstream and sequentially sending the frames in the redundancy-coded HPP bitstream to a decoder side.

Video data processing method and apparatus

A scan-driving device is disclosed herein. The scan-driving device comprises a plurality of scan-driving circuits, a detective-driving circuit, and a modulating module. The scan-driving circuit comprises a n up-pull control module, an up-pull module, a down-transfer module, a down-pull module, a down-pull-sustain module, a bootstrap capacitor. The detective-driving circuit in the scan-driving device of the present invention is able to better maintain the ability of down-pull-sustain of the down-pull-sustain module, whereby the stability of the scan-driving device is increased.

Scan-driving device with detective-driving circuit

The present invention provides a scan-driving circuit used to perform a driving operation on cascaded scanning lines, which comprises a pull-up control module, a pull-up module, a pull-down module, a pull-down sustain module, a down-transmitting module and a bootstrap capacitor. The scan-driving circuit of the present invention enhances the voltage-level control capability of the Q point and raises the reliability of the scan-driving circuit, by disposing a first constant-high voltage and a second constant-high voltage.

Scan-driving circuit

A gate driving circuit is provided, where includes a plurality of gate driving units connected in cascade, each of the gate driving units is used to drive two scan lines arranged continuously, a gate driving signal of a first scan line and a first cascading signal are respectively transmitted by a first pull up module and a first down transmitting module, and a gate driving signal of a second scan line and a second cascading signal are respectively transmitted by a second pull up module and a second down transmitting module. By the above manner, the disclosure is capable of decreasing a component quantity of GOA circuit, thus achieving the ultra-narrow frame design.

Gate driving circuit

The present invention provides a GOA circuit based on oxide semiconductor thin film transistor, which cannot only prevent the electrical leakage to raise the reliability of the GOA circuit but also avoid the generation of the crossfire current in the non-function period by shorting the gate and the source of the fortieth thin film transistor (T) in the first pull-down module () for avoiding the influence of the constant high voltage level (DCH) to the pull-down holding of the first node by electrically coupling both the gate and the drain of the seventy-fifth thin film transistor (T) in the pull-down holding module () to the first node (Q(N)), and clearing the interference of the residual charge to the GOA circuit by providing the reset module () to reset the first node (Q(N)) before generating the each frame to guarantee the normal output of the GOA circuit and the normal display of the image.

GOA circuit based on oxide semiconductor thin film transistor

A scan driving circuit includes a repair assembly, a pull-up assembly, a pull-up control assembly that drives the pull-up assembly, a pull-down maintaining assembly, and a reference low-level signal. When the pull-down maintaining assembly turns off in a work stage of a current scanning line, the repair assembly turns off. When the pull-down maintaining assembly turns on in the work stage of the current scanning line, the repair assembly is connected with the pull-down maintaining assembly. In the work stage of the current scanning line, the reference low-level signal is sent to the repair assembly via the turn-off unit, and turns off the pull-down maintaining assembly through the repair assembly.

Scan driving circuit and LCD device

The disclosure is related to a scan driving circuit for an oxide semiconductor thin film transistor and the NOR gate logic operation circuit thereof. The NOR gate logic operation circuit includes a first invertor and a second invertor applied in the pull down holding circuit of the GOA circuit, and a plurality of transistors. The combination of the NTFT and the invertor displaces the original function of the PMOS element to realize a characteristic similar to an original COMS NOR operation circuit, thereby solving a design problem of the logic operation circuit using a IGZO TFT single element, such that a larger scale digital integrated circuit is further suitably integrated into the liquid crystal display.

Scan driving circuit and NOR gate logic operation circuit thereof

The invention provides a scan driving circuit for an oxide semiconductor thin film transistor and a NAND logic operation circuit thereof. The NAND logic operation circuit includes: a first inverter and a second inverter applied to a pull-down holding circuit of a GOA circuit, and multiple transistors. The invention uses the combination of NFTF and inverter to replace a function of original PMOS elements and thereby achieves characteristics similar to that of the original CMOS NAND operation circuit. Accordingly, the invention can solve the design problem of IGZO TFT single type of device logic operation circuit and thus is more suitable for integrating a large scale digital integrated circuit on a liquid crystal display device.

Scan driving circuit and NAND logic operation circuit thereof

The present invention provides a GOA circuit with forward-backward scan function. In the GOA unit circuit of every stage, the pull-up controlling module comprises two thin film transistors respectively controlling the forward, backward scans. With proper received signals, as the thin film transistor controlling the forward scan is on, the GOA circuit performs forward scan from the GOA unit circuit of the first stage to the GOA unit circuit of the last stage, and as the thin film transistor controlling the backward scan is on, the GOA circuit performs backward scan from the GOA unit circuit of the last stage to the GOA unit circuit of the first stage. Thurs, the GOA circuit possessing functions of forward scan and backward scan at the same time can be achieved to expand the application field of the GOA circuit.

GOA circuit with forward-backward scan function

The present invention provides a GOA circuit based on oxide semiconductor thin film transistor. By adding the fifty-fifth, fifty-sixth, fifty-seventh thin film transistors (T, T, T) respectively corresponding to the fourth, fifth, second nodes (S(N), K(N), P(N)) in the pull-down holding module (). The fifty-fifth, fifty-sixth, fifty-seventh thin film transistors (T, T, T) are controlled with the stage transfer signal of the GOA unit circuit of the former N&#x2212;th stage or the scan driving signal of the GOA unit circuit of the former N&#x2212;th stage to pull down the voltage levels of the fourth, fifth, second nodes (S(N), K(N), P(N)) under circumstance that the first node (Q(N)) is not completely boosted to rapidly deactivate the pull-down holding module () for ensuring the normal boost of the voltage level of the first node (Q(N)). The first node (Q(N)) is guaranteed to be high voltage level in the functioning period, and thus, the normal output of the GOA circuit is ensured.

Disclosed is a scan driving circuit for oxide semiconductor thin film transistors, in which a pull-down holding circuit part includes a main inverter and an auxiliary inverter. By introducing a constant low voltage level (DCL) and setting the constant low voltage level (DCL) less than the second negative voltage level (VSS), which is in turn less than the first negative voltage level (VSS), the influence of electrical property of the oxide semiconductor thin film transistors to the scan driving circuit, particularly the bad function due to the electric leakage issue, can be prevented to ensure that the pull-down holding circuit part can be normally pulled down in the functioning period and at higher voltage level in a non-functioning period to effectively maintain the first node (Q(N)) and the output end (G(N)) at low voltage level.

Scan driving circuit for oxide semiconductor thin film transistors

A scan driving circuit for oxide semiconductor thin film transistors includes a pull-down holding circuit part including a first pull-down holding module and a second pull-down holding module to help extend the lifetime of the circuit. The first pull-down holding module includes a first main inverter and a first auxiliary inverter introducing a constant low voltage level. The second pull-down holding module includes a second main inverter and a second auxiliary inverter introducing a constant low voltage level. The constant low voltage level is set lower than a second negative voltage level, which is in turn lower than a first negative voltage level. An influence of electrical property of the oxide semiconductor thin film transistors on the scan driving circuit, particularly poor functioning resulting from an electric leakage issue, can be prevented.

The present disclosure relates to a scanning driving circuit and a LCD. The scanning driving circuit includes first driving circuits and second diving circuits, each of the first driving circuits connects with each of the second diving circuits, and the first driving circuit and the second diving circuit are alternately arranged. Each of the first driving circuit and second diving circuit includes a pull-up module, a pull-up controlling module for driving the pull-up module, a reference voltage end, and a first pull-down maintaining unit. Each of the first driving circuit also includes a first pull-down maintaining controlling unit. The first and second driving circuit share the first pull-down maintaining control unit of the first driving circuit. In this way, the scanning driving circuit is stable, and the structure of the circuit is simple. The power consumption may be reduced and the border of the LCD may be narrowed down.

Scanning driving circuits and liquid crystal devices (LCD) with the same

A gate driving circuit, an array substrate, and a display device are disclosed. The present disclosure relates to the technical field of display, and the technical problem of poor quality of the waveform of the gate driving signal that is output by the traditional circuit manufactured through GOA technology can be solved. The gate driving circuit is used for outputting the gate driving signal to Gand comprises a pull-up circuit, a download transistor, and a pull-down circuit. The pull-up circuit is used for outputting a high-level signal to a reference point of said gate driving circuit, a first input end of said pull-up circuit is connected with G, a second input end thereof is connected with G, and an output end thereof is connected with said reference point.

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Guangdong, China

Chao Dai