Globalfoundries Singapore Pte. Ltd.

Chao Cheng

Purakh Raj Verma

Shao-fu Sanford Chu

Handoko Linewih

Yemin Dong

Xin Zou

Integrated circuits and methods of producing integrated circuits are provided. In an exemplary embodiment, an integrated circuit includes a source and a drain defined within a body isolation well. A gate overlies the body isolation well between the source and the drain, and an isolating structure is formed within the body isolation well. The isolating structure sections the source into a plurality of source sections with the plurality of source sections adjacent to one gate.

Integrated circuits with high current capacity and methods for producing the same

A method of manufacture of an integrated circuit system includes: providing a semiconductor substrate having an active region, implanted with impurities of a first type at a first concentration; forming an isolation region around the active region; forming a parasitic transistor by applying a gate electrode, implanted with impurities of a second type at a second concentration, over the active region and the isolation region; and applying an isolation edge implant, with the impurities of the first type at a third concentration greater than or equal to the second concentration, for suppressing the parasitic transistor.

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Singapore, Singapore

Chao Cheng