Samsung Electronics Co., Ltd.

University of California

California Institute of Technology

Ulsan National Institute of Science and Technology

Cheongju University Industry & Academy Cooperation Foundation

Chanwook Baik

Kyungsang Cho

Jaesoong Lee

Younggeun Roh

Yeonsang Park

Hojung Kim

Changwon Lee

Jisoo Kyoung

Heejeong Jeong

Sangmo Cheon

Duhyun Lee

Payam Heydari

Unjeong Kim

Jeongyub Lee

Youngzoon Yoon

Jineun Kim

Peyman Nazari

Hongseok Lee

Harry A Atwater

Wonjae Joo

Changseung Lee

Hongkyu Park

Yooseong Yang

Woong Ko

Ruzan Sokhoyan

Ragip Pala

Ghazaleh Kafaie Shirmanesh

Yu-Jung Lu

Andrei Faraon

Hyochul Kim

Seungmin Yoo

Soojin Park

Yu Horie

Byonggwon Song

Ehsan Arbabi

Jaekwan Kim

Alexey Dmitrievich Lantsov

Maxim Vladimirovich Riabko

Sangyeol Lee

Sadegh Faraji-Dana

Mahsa Seyedeh Kamali

Yeryoung Lee

HoJung Kim

Provided is an image sensor including a sensor array including a plurality of light-sensors respectively including an optoelectronic device, the optoelectronic device including a first electrode, a second electrode spaced apart from the first electrode, and an active layer provided between the first electrode and the second electrode, the active layer including a plurality of quantum dot layers having different energy bands, and a circuit including circuits respectively connected to the plurality of light-sensors and configured to readout an optoelectronic signal generated from each of the plurality of light-sensors.

Optoelectric device and electronic device including the same

An opto-electronic device includes a base portion, a first electrode and a second electrode formed on an upper surface of the base portion apart from each other, a quantum dot layer, and a bank structure. The quantum dot layer is between the first electrode and the second electrode on the base portion and includes a plurality of quantum dots. The bank structure covers at least partial regions of the first electrode and the second electrode, defines a region where the quantum dot layer is formed, and is formed of an inorganic material.

Opto-electronic device and image sensor including the same

An electromagnetic wave radiator may include: a first metal layer; a plurality of metal side walls vertically protruding along an edge of the first metal layer; and a second metal layer suspended over the first metal layer. The second metal layer includes a plurality of ports radially extending from edges of the second metal layer and a plurality of slots penetrating the second metal layer in a radial direction.

Electromagnetic wave radiator

An optical filter, a spectrometer including the optical filter, and an electronic apparatus including the optical filter are disclosed. The optical filter includes a first reflector including a plurality of first structures that are periodically two-dimensionally arranged, each of the first structures having a ring shape, and a second reflector spaced apart from the first reflector and including a plurality of second structures that are periodically two-dimensionally arranged.

Optical filter, spectrometer including the optical filter, and electronic apparatus including the optical filter

A meta optical device configured to sense incident light includes a plurality of nanorods each having a shape dimension less than a wavelength of the incident light. Each nanorod includes a first conductivity type semiconductor layer, an intrinsic semiconductor layer, and a second conductivity type semiconductor layer. The meta optical device may separate and sense wavelengths of the incident light.

Meta optical devices and methods of manufacturing the same

Provided are opto-electronic devices with low dark noise and high signal-to-noise ratio and methods of manufacturing the same. An opto-electronic device may include: a semiconductor substrate; a light receiving unit formed in the semiconductor substrate; and a driving circuit arranged on a surface of the semiconductor substrate. The light receiving unit may include: a first semiconductor layer partially arranged in an upper region of the semiconductor substrate and doped with a first conductivity type impurity; a second semiconductor layer arranged on the first semiconductor layer and doped with a second conductivity type impurity; a transparent matrix layer arranged on an upper surface of the second semiconductor layer; a plurality of quantum dots arranged to contact the transparent matrix layer; and a first electrode and a second electrode electrically connected to the second semiconductor layer and respectively arranged on both sides of the transparent matrix layer.

Opto-electronic device having junction field-effect transistor structure and method of manufacturing the same

Provided is an opto-electronic device including a semiconductor substrate doped with a first conductivity type impurity, a source region and a drain region provided on the semiconductor substrate spaced apart from each other and doped with a second conductivity type impurity which is electrically opposite to the first conductivity type impurity, a first electrode and a second electrode electrically connected to the source region and the drain region, respectively, a quantum dot layer provided between the source region and the drain region on the semiconductor substrate and including quantum dots, a first insulation layer configured to insulate the semiconductor substrate and the quantum dot layer from each other, and a transparent electrode layer provided on the quantum dot layer.

Provided is an opto-electronic device having low dark noise and a high signal-to-noise ratio. The opto-electronic device may include: a first semiconductor layer doped to have a first conductivity type; a second semiconductor layer disposed on an upper surface of the first semiconductor layer and doped to have a second conductivity type electrically opposite to the first conductivity type; a transparent matrix layer disposed on an upper surface of the second semiconductor layer; a plurality of quantum dots arranged to be in contact with the transparent matrix layer; and a first electrode provided on a first side of the transparent matrix layer and a second electrode provided on a second side of the transparent matrix layer opposite to the first side, wherein the first electrode and the second electrode are electrically connected to the second semiconductor layer.

Opto-electronic device having junction field-effect transistor structure and image sensor including the opto-electronic device

Provided is a quantum dot (QD) light modulator and an apparatus including the QD light modulator. The QD light modulator may include a QD-containing layer including QDs having light-emission characteristics, a refractive index change layer arranged adjacent to the QD-containing layer, and a reflector arranged facing the QD-containing layer. The refractive index change layer may include a carrier density change area in which a carrier density changes, and the carrier density change area may be arranged adjacent to the QD-containing layer. The light-emission characteristics of the QD-containing layer may be modulated according to a change in a property of the refractive index change layer. The QD light modulator may further include a nano-antenna structure arranged on the QD-containing layer.

Quantum dot light modulator and apparatus including the same

An optical filter includes a first reflector including a plurality of first sub-wavelength structures that are two-dimensionally arranged and spaced apart by a first period based on a first rule, and a second reflector provided separate from the first reflector, the second reflector including a plurality of second sub-wavelength structures that are two-dimensionally arranged and spaced apart by a second period based on a second rule.

Optical filter and spectrometer including sub-wavelength reflector, and electronic apparatus including the spectrometer

A light filter includes a plurality of spectrum modulation portions, each having a different thicknesses or a different mixing ratio of materials thereof. Each of the plurality of spectrum modulation portions has a different transmittance spectrum.

Light filter and spectrometer including the light filter

An optical modulating device may include a plurality of quantum dot (QD)-containing layers having QDs and a plurality of refractive index change layers. The QD-containing layers may be disposed between the refractive index change layers, respectively. The optical modulating device may be configured to modulate light-emission characteristics of the plurality of QD-containing layers. At least two of the QD-containing layers may have different central emission wavelengths. At least two of the plurality of refractive index change layers may include different materials or have different carrier densities.

Optical modulating device and apparatus including the same

Growing community of inventors

Yongin-si, South Korea

Chanwook Baik