Tokyo Electron Limited

Chantal J Arena-Foster

Paul Schilling

Allan Wendell Awtrey

Nicholas Alan Ryza

Joseph T Hillman

Robert F Foster

Tugrul Yasar

Thomas J Licata

An apparatus for developing a polymeric film without the need for a water rinse step is disclosed. An object having a surface supporting a polymeric film is placed onto a support region within a pressure chamber of the apparatus. A fluid and developer is introduced into the pressure chamber and the object is processed at supercritical conditions to develop the polymeric film such that the polymeric film is not substantially deformed. The pressure chamber is then vented.

Developing photoresist with supercritical fluid and developer

A method for drying an object, having a polymeric film, wherein the object is submerged in a rinse liquid. The object is removed from the rinse liquid and the object is placed in a solvent bath before a sufficient amount of the rinse liquid can evaporate from the object. The density of a solvent in the solvent bath depends on a direction of orientation of the polymeric film with respect to a force. The object is removed from the solvent bath. A drying process is performed.

Drying resist with a solvent bath and supercritical CO2

A method of developing a polymeric film without the need for a water rinse step. An object having a surface supporting a polymeric film is placed onto a support region within a pressure chamber. A fluid and developer is introduced into the pressure chamber and the object is processed at supercritical conditions to develop the polymeric film such that the polymeric film is not substantially deformed. The pressure chamber is then vented.

A method to redistribute solid copper deposited by PVD on a wafer topography. The deposited copper is solubilized in a fluid for redistribution. The copper redistribution prevents inherent nonuniformity of the deposited copper film thickness by improving the uniformity of thickness of the copper film on the covered surfaces, such as vertical and bottom surfaces. The method provides the advantages of good adhesion and good grain growth and orientation that are achieved with copper deposited by PVD, and also provides the good step coverage as achieved with copper deposited by CVD.

Redistribution of copper deposited films

An in-situ method for synthesis of a vapor type of copper or other metal precursor from a solid source of metal in an oxidation state of 1 or greater The solid source is localized above the wafer and its temperature is controlled independently from the wafer temperature. The solid source may be located, for example, in a showerhead. A metal precursor vapor is produced, and this vapor is drawn onto the wafer, allowing deposition to occur on the wafer and a solid thin metal film to form on the wafer. The invention overcomes the problem of low partial pressure of copper precursors in copper CVD.

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Mesa, AZ, United States of America

Chantal J Arena-Foster