Electronics and Telecommunications Research Institute

Konkuk University Industrial Cooperation Corp

University-Industry Cooperation Group of Kyung Hee University

Chansoo Yoon

Bae Ho Park

Seungeon Moon

Jong Pil Im

Jeong Hun Kim

Seung Youl Kang

Jaewoo Lee

Solyee Im

Sung-Min Yoon

Jiyong Woo

Ji Hoon Jeon

A neuron circuit and an operating method thereof are disclosed. The neuron circuit may include an input unit to which an input pulse is applied, a bipolar memristor configured to have one end connected to one end of the input unit, a first capacitor configured to be connected between the one end of the bipolar memristor and a ground, a first diode configured to have an anode connected to the one end of the bipolar component, a second capacitor configured to have one end connected to a cathode of the first diode, a first switch configured to be connected between the one end of the second capacitor and the ground, and a second switch configured to be connected between the anode of the first diode and the other end of the second capacitor.

Neuron circuit and operating method thereof

The present disclosure relates to a memory device, and more particularly, to a memory device including a substrate, a plurality of vertical structures disposed on the substrate and including insulation layers and lower electrodes, which are alternately laminated with each other, wherein the vertical structures are aligned in a first direction parallel to a top surface of the substrate and a second direction crossing the first direction, an upper electrode disposed on a top surface and side surfaces of each of the vertical structures, and a first dielectric layer disposed between the upper electrode and the vertical structures to cover the top surface and the side surfaces of each of the vertical structures. Here, the first dielectric layer includes a ferroelectric material.

Memory device and method of manufacturing the same

Provided herein are a capacitor, a memory device including the capacitor, and a method of manufacturing the capacitor. The capacitor is manufactured by directly depositing a metal electrode having high ion mobility on an ultrathin ferroelectric layer having a certain thickness, and thus may simultaneously use metal cation migration and ferroelectric polarization inversion, and a low-power and high-performance capacitor capable of being selectively activated may be provided by simultaneously controlling an external electric field and an internal electric field caused by polarization of the inside of a ferroelectric thin film.

Selectively activated synaptic device with ultrasmall dimension and low power consumption

Growing community of inventors

Busan, South Korea

Chansoo Yoon