Samsung Electronics Co., Ltd.

Chansoo Kang

Youngdo Kim

Sangki Nam

Changsoon Lim

Daewon Kang

Jonghun Pi

Hoonseop Kim

Sungyeol Kim

Kyungmin Lee

Kyunghyun Kim

Seungbo Shim

Sungho Jang

Sungyong Lim

Vasily Pashkovskiy

Sejin Oh

Namkyun Kim

Donghyub Lee

Youngduk Suh

Kyunjin Lee

Vladimir Vsevolodovich Protopopov

An apparatus includes first and second VI sensors, an optical sensor, and an arcing detector. The first VI sensor is disposed in a power filter or on a power supply line connected to a heater disposed in a lower electrode of a process chamber in which a plasma process is performed. The first VI sensor senses a harmonic generated from a first power supply supplying power to the lower electrode and outputs a first signal. The optical sensor senses an intensity of light generated from the process chamber and outputs a second signal. The second VI sensor is disposed on a power supply line connected to an upper electrode and senses a harmonic generated from a second power supply supplying power to the upper electrode and outputs a third signal. The arcing detector determines whether arcing occurs based on one or more of the first, second, and third signals.

Apparatus for arcing diagnosis, plasma process equipment including the same, and arcing diagnosis method

A device for measuring a density of plasma is provided. The device includes a first sensor configured to measure a microwave spectrum of an input port reflection parameter of plasma, the first sensor having a probe including a conductive material and a flat plate shape, and a second sensor configured to measure an optical signal generated from the plasma, the second sensor being configured to detect the optical signal through the probe of the first sensor.

Device for measuring density of plasma, plasma processing system, and semiconductor device manufacturing method using the same

A diagnostic device for diagnosing distribution of a radical in a plasma processing chamber, the diagnostic device, may include a spectrometer receiving an optical signal through at least one optical channel connected to the plasma processing chamber, and performing spectral analysis on the optical signal in response to a synchronization signal corresponding to each of states of a multi-level pulse applied to the plasma processing chamber and a synchronizer generating the synchronization signal corresponding to each of the states of the multi-level pulse.

Device for radical diagnostic in plasma processing chamber, radical diagnostic system having the same, and operating method thereof

A method of cleaning a collector of an extreme ultraviolet light source system includes introducing the collector separated from the extreme ultraviolet light source system into a chamber; capturing an optical image of a reflective surface of the collector; measuring a contamination level of the reflective surface by comparing the optical image with a prestored standard image; performing a first cleaning operation if the contamination level exceeds a preset first reference value, the first cleaning operation including cleaning the reflective surface by spraying dry ice particles onto the reflective surface; and performing a second cleaning operation if the contamination level is less than or equal to the preset first reference value. The second cleaning operation includes cleaning the reflective surface by radiating atmospheric plasma onto the reflective surface and measuring a microcontamination level and a damage level of the reflective surface.

Method of cleaning collector of EUV light source system

Growing community of inventors

Hwaseong-si, South Korea

Chansoo Kang