Samsung Electronics Co., Ltd.

Korea Institute of Science and Technology

Seoul National University

Chanki Kim

Kijun Lee

Myungkyu Lee

Sunghye Cho

Yeonggeol Song

Sanguhn Cha

Sungrae Kim

Junghwan Choi

Jaeyoun Youn

Yesin Ryu

Hoyoun Kim

Daesoo Kim

Sung-Rae Kim

Jihwan Hyun

Jungryun Lee

Hee-Sup Shin

Sukchan Lee

Soonwook Choi

Jaewha Kim

Jongseon No

An error correction code (ECC) decoder includes a syndrome generator and a burst error corrector. The syndrome generator generates global syndrome data and local syndrome data using input data and a parity check matrix based on a constacyclic code. The burst error corrector corrects a correctable error included in the input data using the global syndrome data and the local syndrome data. The input data includes a plurality of data bits arranged along a first direction and a second direction. The ECC decoder simultaneously corrects a single burst error and a multi-bit error. The single burst error occurs on two or more symbols arranged along the first direction in the input data, and each symbol includes two or more data bits. The multi-bit error randomly occurs on two or more data bits in the input data.

Error correction code decoder using constacyclic code, and memory device and memory system including the same

A method for reading data from a memory includes; reading a codeword from the memory cells, correcting the errors when a number of errors in the codeword is less than a maximum number of correctable errors, correcting the errors when the number of errors in the codeword is equal to the maximum number of correctable errors and the errors correspond to a same sub-word line, and outputting signal indicating that the errors are an uncorrectable error when the number of errors of the codeword is equal to the maximum number of correctable errors and the errors correspond to different sub-word lines.

Memory device and method reading data

A memory controller includes an error correction circuit and a central processing unit (CPU) to control the error correction circuit. The error correction circuit includes an error correction code (ECC) decoder and a memory to store a parity check matrix. The ECC decoder performs an ECC decoding on a codeword read from the memory module to: (i) generate a first syndrome and a second syndrome, (ii) generate a decoding mode flag associated with a type of errors in the codeword based on the second syndrome and a decision syndrome, (iii) operate in one of a first decoding mode and a second decoding mode based on the decoding mode flag, and (iv) selectively correct one of a chip error associated with one of the data chips and one or more symbol errors in the codeword.

Memory controllers and memory systems including the same

A semiconductor memory device includes a memory cell array, an error correction circuit, an input/output (I/O) gating circuit and a control logic circuit. The memory cell array is coupled to word-line and bit-lines and is divided into sub array blocks. The error correction circuit generates parity data based on main data using an error correction code (ECC). The control logic circuit controls the error correction circuit and the I/O gating circuit based on a command and address. The control logic circuit stores the main data and the parity data in (k+1) target sub array blocks in the second direction among the sub array blocks, and controls the I/O gating circuit such that a portion of the (k+1) target sub array blocks store both of a portion of the main data and a portion of the parity data.

Semiconductor memory devices and memory systems with enhanced error detection and correction

A memory controller to control a memory module includes an error correction code (ECC) engine, a central processing unit to control the ECC engine and an error managing circuit. The ECC engine performs an ECC decoding on a read codeword set from the memory module to generate a first syndrome and a second syndrome in a read operation, corrects correctable error in a user data set based on the first syndrome and the second syndrome and provides the error management circuit with the second syndrome associated with the correctable error. The error managing circuit counts error addresses associated with correctable errors detected through read operations, stores second syndromes associated with the correctable errors by accumulating the second syndromes, determines attribute of the correctable errors based on the counting and the accumulated second syndromes, and determine an error management policy on a memory region associated with the correctable errors.

Memory controllers, memory systems and memory modules

An error correction circuit includes an error correction code (ECC) encoder and an ECC decoder. The ECC encoder generates, based on a main data, a parity data using an ECC represented by a generation matrix and stores a codeword including the main data and the parity data in a target page. The ECC decoder reads the codeword from the target page as a read codeword based on an externally provided address to generate different syndromes based on the read codeword and a parity check matrix which is based on the ECC, and applies the different syndromes to the main data in the read codeword to correct a single bit error when the single bit error exists in the main data or to correct two bit errors when the two bit errors occur in adjacent two memory cells in the target page.

Error correction circuit of semiconductor memory device and semiconductor memory device

A memory controller configured to control a memory module, the memory controller including processing circuitry configured to perform ECC decoding on a read codeword from the memory module using a first portion of a parity check matrix to generate a first syndrome and a second syndrome, determine a type of error in the read codeword based on the second syndrome and a decision syndrome, the decision syndrome corresponding to a sum of the first syndrome and the second syndrome, and output a decoding status flag indicating the type of error.

The present invention relates to a novel use of an &#x3b1;1G T-type calcium channel transgenic mouse as a nervous disease model, more particularly, a novel use of a mouse deficient in &#x3b1;1G T-type calcium channel showing novelty-seeking and alcohol preference as a nervous disease model for human nervous related diseases such as novelty-seeking character, alcoholism, anxiety and emotion disorder by stress, etc. The &#x3b1;1G T-type channel transgenic mice showing novelty-seeking and alcohol preference of the present invention can be effectively used for the development of a medicine and a therapeutic method for human nervous diseases.

Mice lacking alpha 1G showing enhanced novelty-seeking and alcohol preference and therapeutic methods for mood disorders by modulating alpha 1G T-type calcium channels

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Ansan-si, South Korea

Chanki Kim