Samsung Electronics Co., Ltd.

Chanjong Ju

Woojae Jang

Sunyeong Lee

Kyungmoon Kim

A nonvolatile memory device includes a memory cell array, an erase body voltage generator, and an erase source voltage generator. The memory cell array includes memory blocks, each of which includes cell strings each including a ground selection transistor, memory cells, and a string selection transistor stacked in a direction perpendicular to a substrate. The erase body voltage generator applies an erase body voltage to the substrate during an erase operation. The erase source voltage generator applies an erase source voltage to a common source line connected with ground selection transistors of the cell strings during the erase operation.

Growing community of inventors

Hwaseong-si, South Korea

Chanjong Ju