Samsung Electronics Co., Ltd.

Soulbrain Co., Ltd.

Chanjin Jeong

Hoon Hee Han

Kyounghwan Kim

Kyunghyun Kim

Yongsun Ko

Jihoon Jeong

Daehong Eom

Sang Won Bae

Se-Ho Cha

Jinuk Lee

ChangSup Mun

Jaewan Park

Junghun Lim

Byoungmoon Yoon

Seonghwan Park

Yanghwa Lee

Young-taek Hong

Young Taek Hong

Etching compositions are provided. The etching composition includes a phosphoric acid, ammonium ions and a silicon compound material. The silicon compound material includes a silicon atom, at least one selected from the group of a nitrogen atom, a phosphorus atom and a sulfur atom combined with the silicon atom, and at least two oxygen atoms combined with the silicon atom. Methods utilizing the etching compositions are also provided.

Compositions for etching

Etching compositions are provided. The etching composition includes a phosphoric acid, ammonium ions and a silicon compound. The silicon compound includes a silicon atom, an atomic group having an amino group combined with the silicon atom, and at least two oxygen atoms combined with the silicon atom. Methods utilizing the etching compositions are also provided.

Compositions for etching and methods of forming a semiconductor device using the same

Growing community of inventors

Gongju-si, South Korea

Chanjin Jeong