Samsung Electronics Co., Ltd.

Chanhee Park

Minsu Kim

Hyejin Kim

Hyunbae Kim

Jongwoo Kim

Ahreum Kim

Youngdo Kim

Seungjoo Lee

Sangki Nam

Minho Jung

Gunhyuk Yoon

Hyunjae Lee

Seungchul Choi

Youngsan Kim

Provided is an electronic device for controlling surface heart and a method of controlling the electronic device. The electronic device includes a speaker, a temperature sensor, a memory, and a processor electrically coupled to the speaker, the temperature sensor, and the memory. The processor obtains first temperature information based on impedance information measured in a coil included in the speaker; obtains second temperature information measured by the temperature sensor, the second temperature information based on a heat source disposed adjacent to the speaker; predicts a surface temperature of a surface area of the electronic device, opposite to an internal area in which the speaker is disposed, based on the first temperature information and the second temperature information using a nonlinear approximation function; and controls an audio signal input to the speaker based on the predicted surface temperature.

Electronic device for controlling surface heat and method of operating the electronic device

A wafer processing apparatus includes a chamber, and a voltage waveform generator configured to accelerate plasma ions of the chamber, the voltage waveform generator includes: a pulse circuit configured to apply a chamber voltage, which is a pulse voltage, to the chamber by adjusting a chamber current applied to the chamber; and a slope circuit configured to generate a slope in an on-duty of the chamber voltage, which is the pulse voltage, and the pulse circuit includes a first inductive element configured to store a first internal current.

Voltage waveform generator, wafer processing apparatus and plasma processing apparatus

A voltage level shifter cell, which is configured to convert voltage levels of input signals of multi-bits, includes: a first circuit area including a first voltage level shifter configured to convert a 1-bit first input signal from among the input signals; and a second circuit area including a second voltage level shifter configured to convert a 1-bit second input signal from among the input signals, wherein the first circuit area and the second circuit area share a first N-well to which a first power voltage is applied, and the first circuit area and the second circuit area share a second N-well to which a second power voltage is applied, wherein the first N-well is formed to extend in a first direction, and the first N-well and the second N-well are arranged to overlap in a second direction crossing the first direction.

Voltage level shifter cell and integrated circuit including the same

A variable frequency and non-sinusoidal power generator includes a pulse module circuit, a slope module circuit, and first and second cooling systems. The pulse module circuit and the slope module circuit includes control switches, and generates at least one of a output currents and a output voltages by selectively turning on/off the control switches based on control signals. The first and second cooling systems are disposed at first and second sides of the control switches. A bias power having a variable frequency and a non-sinusoidal waveform is generated based on the control signals, at least one of the output currents and the output voltages.

Variable frequency and non-sinusoidal power generator using double side cooling, plasma processing apparatus including the same and method of manufacturing semiconductor device using the same

An integrated circuit is provided. The integrated circuit includes a power gating circuit configured to receive a power supply voltage from a first power line and to output a first driving voltage to a first virtual power line and a logic circuit electrically connected to the first virtual power line and configured to receive power from the power gating circuit. The power gating circuit includes a first p-type transistor and a first n-type transistor connected in parallel between the first power line and the first virtual power line.

Integrated circuit including power gating cell

Growing community of inventors

Incheon, South Korea

Chanhee Park