Hughes Aircraft Company

Chanh M Nguyen

Michael G Case

Authi Ariamuthu Narayanan

William W Hooper

A doping profile is disclosed for realizing a varactor diode that exhibits a high breakdown voltage V.sub.BR, e.g.,&gt;100 volts, and a capacitance which has a bi-level characteristic. In particular, the capacitance has a C.sub.max level and a C.sub.min level. The doping profile includes two lightly doped regions and, between them, a third region with higher doping. The doping concentrations and widths of the first two regions substantially set the tuning ratio of C.sub.max /C.sub.min, and the doping concentration and width of the third region substantially sets the transition voltage V.sub.TR between the bi-level capacitances.

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Newbury Park, CA, United States of America

Chanh M Nguyen