Samsung Electronics Co., Ltd.

Changyun Lee

Sanghun Kim

Sungyeol Kim

Sunghoi Hur

Jungdal Choi

Younghwan Kim

Yoocheol Shin

Youngdo Kim

Taemin Earmme

Myoungsoo Kim

Sejin Oh

Byungkyu Cho

Sangchul Han

Sunghun Jang

Daeman Seo

A plasma generator includes a coaxial tube assembly, a radio frequency (RF) electrode, and a feed including an inner circumferential surface that defines a first and second recesses at opposite, first and second ends of the feed. A first protrusion of the coaxial tube assembly is coupled to the first recess of the feed. A second protrusion of the coaxial tube assembly is coupled to the second recess of the feed. The feed includes first and second inner surfaces that define first and second insertion grooves in the inner circumferential surface at the first and second ends of the feed, respectively. First and second coil springs are at least partially within the first and second insertion grooves, respectively. The coaxial tube assembly, the RF electrode, and the feed provide an RF power transmission path based on the feed being coupled between the coaxial tube assembly and the RF electrode.

Plasma generator

A plasma control device includes a matching circuit, a resonance circuit, and a controller. The matching circuit is connected to a first electrode of a plasma chamber including the first electrode and a second electrode, and matches impedance of a radio frequency (RF) power by an RF driving signal with an impedance of the first electrode. The RF driving signal is based on a first RF signal having a first frequency. The resonance circuit is connected between the second electrode and a ground voltage, and controls plasma distribution within the plasma chamber by providing resonance with respect to harmonics associated with the first frequency and by adjusting a ground impedance between the second electrode and the ground voltage. The controller provides the resonance circuit with a capacitance control signal associated with the resonance and switch control signals associated with the ground impedance.

Plasma control device and plasma processing system

In a read step or a program (write) verification step of a semiconductor memory device, read voltages different from one another are applied to a pair of word lines respectively disposed on both sides of a selected word line to suppress the enlargement of program distribution.

Memory semiconductor device and method of operating the same

A nonvolatile memory device is provided. The device may include a plurality of cell strings that are configured to share a bit line, word lines, and selection lines. Each of the cell strings may include a plurality of memory cells connected in series to each other and a string selection device controlling connections between the memory cells and the bit line, and the string selection device may include a first string selection element with a first threshold voltage and a second string selection element connected in series to the first string selection element and having a second threshold voltage different from the first threshold voltage. At least one of the first and second string selection elements may include a plurality of switching elements connected in series to each other.

Nonvolatile memory device

Growing community of inventors

Suwon-si, South Korea

Changyun Lee