Samsung Electronics Co., Ltd.

Gwangju Institute of Science and Technology

Changyoung Park

Sanghun Lee

Yonghwa Park

Byunghoon Na

Jangwoo You

Heesun Yoon

Myungjae Jeon

Yongchul Cho

Yongtak Lee

Gunwu Ju

YongHwa Park

Provided is a high-quality substrate including a silicon layer, a multilayer buffer layer on the silicon layer, and an indium phosphide (InP) layer on the multilayer buffer layer, wherein a crystal growth direction of the silicon layer is a direction inclined by 1° to 10° with respect to a vertical direction, and wherein the multilayer buffer layer includes a buffer layer in which a crystal growth direction is inclined with respect to the vertical direction.

Substrate for optical device, method of manufacturing the same, optical device including the substrate for optical device, method of manufacturing the same, and electronic apparatus including optical device

An optical device includes a multilayered GaAs structure including a plurality of sublayers and an optical structure layer on the multilayered GaAs structure, the optical structure layer including a Group III-V compound semiconductor material. The optical structure layer may be, for example, a light-emitting layer having a multi-quantum well structure.

Optical device and manufacturing method thereof

A light detecting device includes a light absorbing layer configured to absorb light in a wavelength range from visible light to short-wave infrared (SWIR); a first semiconductor layer provided on a first surface of the light absorbing layer; an anti-reflective layer provided on the first semiconductor layer and comprising a material having etch selectivity with respect to the first semiconductor layer; and a second semiconductor layer provided on a second surface of the light absorbing layer. The first semiconductor layer has a thickness less than 500 nm so as to be configured to allow light to transmit therethrough in the wavelength range from visible light to SWIR.

Light detecting device and method of manufacturing same

Provided is an optical device including an active layer, which includes two outer barriers and a coupled quantum well between the two outer barriers. The coupled quantum well includes a first quantum well layer, a second quantum well layer, a third quantum well layer, a first coupling barrier between the first quantum well layer and the second quantum well layer, and a second coupling barrier between the second quantum well layer and the third quantum well layer. The second quantum well layer is between the first quantum well layer and the third quantum well layer. An energy band gap of the second quantum well layer is less than an energy band gap of the first quantum well layer, and an energy band gap of the third quantum well layer is equal to or less than the energy band gap of the second quantum well layer.

Optical device including three-coupled quantum well structure having asymmetric multi-energy levels

Provided are an infrared detecting device and an infrared detecting system including the infrared detecting device. The infrared detecting device includes at least one infrared detector, and the at least one infrared detector includes a substrate, a buffer layer, and at least one light absorbing portion. The buffer layer includes a superlattice structure.

Infrared detecting device and infrared detecting system including the same

An infrared detector and an infrared sensor including the infrared detector are provided. The infrared detector includes a plurality of quantum dots spaced apart from each other and including a first component, a first semiconductor layer covering the plurality of quantum dots, and a second semiconductor layer covering the first semiconductor layer.

Infrared detector and infrared sensor including the same

An edge emitting laser light source and a three-dimensional (3D) image obtaining apparatus including the edge emitting laser light source are provided. The edge emitting laser light source includes a substrate; an active layer disposed on the substrate; a wavelength selection section comprising grating regions configured to select wavelengths of light emitted from the active layer; and a gain section configured to resonate the light having the selected wavelengths in a direction parallel with the active layer.

Edge emitting laser light source and 3D image obtaining apparatus including the same

A transmissive optical shutter and a method of fabricating the same are provided. The transmissive optical shutter includes a first contact layer, an epitaxial layer disposed over the first contact layer, the epitaxial layer being configured to modulate intensity of incident light having a specific wavelength, a second contact layer disposed on the epitaxial layer, a first electrode disposed on the first contact layer, at least one second electrode disposed on the second contact layer, and a substrate disposed under the first contact layer.

Transmissive optical shutter and method of fabricating the same

An optical device includes an active layer that includes at least two outer barriers and at least one coupled quantum well that is inserted between the at least two outer barriers. Each coupled quantum well includes at least three quantum well layers and at least two coupling barriers that are respectively provided between the at least three quantum well layers. Thicknesses of two quantum well layers disposed at opposite end portions of the at least three quantum well layers are less than a thickness of the other quantum well layer disposed between the two quantum well layers disposed at the opposite end portions. A bandgap of the two quantum well layers disposed at the opposite end portions may be higher than a bandgap of the other quantum well layer disposed between the two quantum well layers.

Optical device including three-coupled quantum well structure

A depth image measuring camera includes an illumination device configured to irradiate an object with light, and a light-modulating optical system configured to receive the light reflected from the object. The depth image measuring camera includes an image sensor configured to generate an image of the object by receiving light incident on the image sensor that passes through the light-modulating optical system. The light-modulating optical system includes a plurality of lenses having a same optical axis, and an optical modulator configured to operate in two modes for measuring a depth of the object.

Camera for measuring depth image and method of measuring depth image

An optical modulator is provided, including a lower reflection layer, an active layer formed on the lower reflection layer, and an upper reflection layer formed on the active layer. The active layer includes a multiple quantum well structure including a quantum well layer and a quantum barrier layer. The upper reflection layer includes a dielectric material. A plurality of micro cavity layers are included in the upper reflection layer.

Optical modulator having reflection layers

A transmissive optical shutter includes a first contact layer provided on a substrate; a plurality of stacks provided on the first contact layer, each stack of the plurality of stacks including a first reflective layer, an active layer, a second reflective layer, and a second contact layer sequentially provided on the first contact layer; a first electrode provided on the first contact layer; and a plurality of second electrodes respectively provided on corresponding second contact layers of the second contact layers of the plurality of stacks, each second electrode of the plurality of second electrodes being comb-shaped.

Growing community of inventors

Yongin-si, South Korea

Changyoung Park