Samsung Electronics Co., Ltd.

Seoul National University

Sungkyunkwan University

Industry-university Cooperation Foundation Hanyang University

Fine Semitech Corp.

Changyoung Jeong

Mun Ja Kim

Byunghoon Lee

Hyungwoo Lee

Junghwan Moon

Maenghyo Cho

Muyoung Kim

Sungwoo Park

Byunggook Kim

Tae-Gon Kim

Sanguk Park

SeongSue Kim

Byungchul Yoo

Jinho Ahn

Hwanseok Seo

Heebom Kim

Jeonghwan Min

Yongseung Moon

Myungjun Kim

Jikang Kim

Kyoungchae Seo

Ji Beom Yoo

Joonmyung Choi

Jin Ho Yeo

Qicheng Hu

Jin Goo Park

Hyun-tae Kim

Ki Bong Nam

A method of fabricating a pellicle structure includes forming a metal layer on a temporary substrate, forming a membrane on the metal layer, exposing a bottom surface of the metal layer by separating the temporary substrate from the metal layer, and exposing a bottom surface of the membrane by etching the exposed bottom surface of the metal layer.

Method of fabricating pellicle structure

An adhesive for an EUV mask includes an epoxy resin composition in an amount of 50 wt % to 80 wt % based on a total weight of the adhesive, the epoxy resin composition including an epoxy resin, a hardener, a toughening agent, a filler, and a curing accelerator, and an inorganic filler in an amount of 20 wt % to 50 wt % based on the total weight of the adhesive, the inorganic filler including one or more of aluminum hydroxide or calcium carbonate.

Method of removing an adhesive for an EUV mask and method of reusing an EUV mask

An adhesive for a pellicle, the adhesive including a phenol compound, the phenol compound having at least two hydroxyl groups, a polymer having a hydroxyl group or an amine group, and water.

Adhesive for pellicle, pellicle for photo mask and method for manufacturing the same

A phase shift mask for extreme ultraviolet lithography includes a substrate, a reflective layer on the substrate, a capping layer on the reflective layer, a buffer pattern on the capping layer, the buffer pattern including an opening exposing a surface of the capping layer, and an absorber pattern on the buffer pattern, the absorber pattern including a refractive index less than a refractive index of the buffer pattern and a thickness greater than a thickness of the buffer pattern. The buffer pattern includes a material having an etch selectivity with respect to the absorber pattern and the capping layer.

Phase shift mask for extreme ultraviolet lithography and a method of manufacturing a semiconductor device using the same

There are provided a lithography method capable of selecting best resist and a semiconductor device manufacturing method and exposure equipment based on the lithography method. The lithography method includes estimating a shape of a virtual resist pattern based on a multi-scale simulation for resist, forming a test resist pattern by performing exposure on selected resist based on the simulation result, comparing the test resist pattern with the virtual resist pattern, and forming a resist pattern on an object to be patterned by using the resist when an error between the test resist pattern and the virtual resist pattern is in an allowable range.

Lithography method using multi-scale simulation, semiconductor device manufacturing method and exposure equipment

A pellicle cleaning apparatus includes a stage to support a pellicle, a particle remover above the stage, the particle remover being configured to remove a particle from a first surface of a pellicle, and the particle remover including a cantilever, and an adhesive material on a bottom surface of the cantilever, and a pressure controller adjacent to the stage, the pressure controller being configured to control a pressure of a fluid on a second surface of the pellicle.

Pellicle cleaning apparatus and pellicle cleaning method using the same

A lithography method using a multiscale simulation includes estimating a shape of a virtual resist pattern for a selected resist based on a multiscale simulation; forming a test resist pattern by performing an exposure process on a layer formed of the selected resist; determining whether an error range between the test resist pattern and the virtual resist pattern is in an allowable range; and forming a resist pattern on a patterning object using the selected resist when the error range is in the allowable range. The multiscale simulation may use molecular scale simulation, quantum scale simulation, and a continuum scale simulation, and may model a unit lattice cell of the resist by mixing polymer chains, a photo-acid generator (PAG), and a quencher.

Lithography method using multiscale simulation, and method of manufacturing semiconductor device and exposure equipment based on the lithography method

A pellicle transfer apparatus includes; a base including supporting a target plate, a pellicle and a flexible plate sequentially stacked on the base, and a roller unit laterally movable in a first direction across the base and including a lower roller extending in a second direction intersecting the first direction, and an upper roller above the lower roller and extending in the second direction, wherein the lower roller compresses the flexible plate while the roller unit laterally moves in the first direction across the base to bond the pellicle to the target plate, as the pellicle is separated from the flexible plate, and the flexible plate moves upward to wrap around the lower roller, and the upper roller contacts the flexible plate as it wraps around the lower roller.

Pellicle transfer apparatus and method

A pellicle for a photomask comprises a pellicle membrane. The pellicle membrane incudes a base layer having a first surface and a second surface facing the first surface, and a first recovery layer covering the first surface of the base layer. A content of SP2 covalent bonds between carbon atoms contained in the first recovery layer is less than or equal to a content of SP2 covalent bonds between carbon atoms contained in the base layer.

Pellicle for photomask and method of fabricating the same

Provided is a pellicle to be used in a photolithography process. The pellicle a film, at least a portion of which includes carbon allotropes. The film has a first surface and a second surface facing the first surface, the film comprises a doped region including dopants, the doped region adjacent to the first surface, the dopants include least one of boron or nitrogen, and the doped region comprises a bond between an atom of at least one of the dopants and a carbon atom.

Pellicle and reticle including the same

A pellicle for a photomask comprises a pellicle membrane. The pellicle membrane includes a base layer having a first surface and a second surface facing the first surface, and a first recovery layer covering the first surface of the base layer. A content of SP2 covalent bonds between carbon atoms contained in the first recovery layer is less than or equal to a content of SP2 covalent bonds between carbon atoms contained in the base layer.

Growing community of inventors

Yongin-si, South Korea

Changyoung Jeong