Samsung Electronics Co., Ltd.

Changyoul Moon

Jooho Lee

Yongsung Kim

Junsik Hwang

Wooyoung Yang

Jeongyub Lee

Xianyu Wenxu

Sunghee Lee

Yongyoung Park

Kunmo Chu

A semiconductor device includes a base substrate and a semiconductor chip on the base substrate, the semiconductor chip including a first layer structure and a second layer structure opposite to the first layer structure, at least one of the first and second layer structures including a semiconductor device portion, and a bonding structure between the first layer structure and the second layer structure, the bonding structure including a silver-tin (Ag&#x2014;Sn) compound and a nickel-tin (Ni&#x2014;Sn) compound.

Semiconductor device and method of manufacturing the same

Provided are semiconductor devices and methods of manufacturing the same. A semiconductor device may include a source, a drain, a semiconductor element between the source and the drain, and a graphene layer that is provided on the source and the semiconductor element and is spaced apart from the drain. Surfaces of the source and the drain are substantially co-planar with a surface of the semiconductor element. The semiconductor element may be spaced apart from the source and may contact the drain. The graphene layer may have a planar structure. A gate insulating layer and a gate may be provided on the graphene layer. The semiconductor device may be a transistor. The semiconductor device may have a barristor structure. The semiconductor device may be a planar type graphene barristor.

Semiconductor devices and methods of manufacturing the same

Growing community of inventors

Suwon-si, South Korea

Changyoul Moon