1. Globalfoundries Inc. (17 from 5,671 patents)

1. 10032910 - FinFET devices having asymmetrical epitaxially-grown source and drain regions and methods of forming the same

2. 9793358 - Non-planar semiconductor device with multiple-head epitaxial structure on fin

3. 9508794 - Mixed N/P-type fin semiconductor structure with epitaxial materials having increased surface area through multiple epitaxial heads

4. 9419015 - Method for integrating thin-film transistors on an isolation region in an integrated circuit and resulting device

5. 9385192 - Shallow trench isolation integration methods and devices formed thereby

6. 9362284 - Threshold voltage control for mixed-type non-planar semiconductor devices

7. 9299608 - T-shaped contacts for semiconductor device

8. 9275906 - Method for increasing a surface area of epitaxial structures in a mixed N/P type fin semiconductor structure by forming multiple epitaxial heads

9. 9263516 - Product comprised of FinFET devices with single diffusion break isolation structures

10. 9209186 - Threshold voltage control for mixed-type non-planar semiconductor devices

11. 9171752 - Product comprised of FinFET devices with single diffusion break isolation structures, and methods of making such a product

12. 9159567 - Replacement low-K spacer

13. 9123783 - Integrated circuits and methods of forming integrated circuits with interlayer dielectric protection

14. 9123771 - Shallow trench isolation integration methods and devices formed thereby

15. 9123773 - T-shaped single diffusion barrier with single mask approach process flow