Arizona State University

Arizona Board of Regents, a Body Corporate

Changwu Hu

John Kouvetakis

Ignatius S T Tsong

Andrew Chizmeshya

John Tolle

Cole J Ritter, Iii

Cole J Ritter

Cole J Iii Ritter

Si&#x2014;Ge materials are grown on Si(100) with Ge-rich contents (Ge&#x3e;50 at. %) and precise stoichiometries SiGe, SiGe, SiGeand SiGe. New hydrides with direct Si&#x2014;Ge bonds derived from the family of compounds (HGe)SiH(x=1-4) are used to grow uniform, relaxed, and highly planar films with low defect densities at unprecedented low temperatures between about 300-450&#xb0; C. At about 500-700&#xb0; C., SiGequantum dots are grown with narrow size distribution, defect-free microstructures and highly homogeneous elemental content at the atomic level. The method provides for precise control of morphology, composition, structure and strain. The grown materials possess the required characteristics for high frequency electronic and optical applications, and for templates and buffer layers for high mobility Si and Ge channel devices.

Method for growing Si-Ge semiconductor materials and devices on substrates

The present invention provides novel silicon-germanium hydride compounds, methods for their synthesis, methods for their deposition, and semiconductor structures made using the novel compounds.

Silicon-germanium hydrides and methods for making and using same

Growing community of inventors

Gilbert, AZ, United States of America

Changwu Hu