Lg Display Co., Ltd.

Lg Philips Lcd Co., Inc.

ChangWook Han

Hongseok Choi

Wonhoe Koo

Jeongdae Seo

Hansun Park

Taeshick Kim

KangJu Lee

Seongsu Jeon

Kwangjo Hwang

SeungRyong Joung

SoYeon Ahn

Byungchul Ahn

Gwijeong Cho

JeaHo Park

Woochan Kim

Hyoseok Kim

Heedong Choi

Hyeseung Kang

Taeil Kum

Mingyu Lee

JiYoung Kim

Yoonheung Tak

Taeseok Lim

Sunghoon Pieh

Dohyung Kim

Dohan Kim

Seonkeun Yoo

Shinhan Kim

JungSoo Park

Jungkeun Kim

HeeSuk Pang

Sunghoon Joo

Hwakyung Kim

Jun Yeob Lee

Younseok Kam

YuRi Koh

SungJoon Bae

Youngkwan Jung

Moonky Yee

YoonHeung Tak

MinSu Kim

HwaKyung Kim

Jiyoung Kim

There is provided an organic light emitting diode display device. The organic light emitting diode display device includes a substrate divided into an emission area and a non-emission area, an overcoating layer disposed on the substrate and including a plurality of micro lenses, a plurality of first electrode patterns disposed on the overcoating layer and spaced away from each other in the emission area, an organic emission layer disposed on the plurality of first electrodes, and a second electrode disposed on the organic emission layer.

Organic light emitting diode display device and organic light emitting diode thereof

An organic light emitting display device can include a first electrode on a substrate; a first emission part on the first electrode, the first emission part including a first emission layer; a second emission part on the first emission part, the second emission part including a second emission layer; a third emission part on the second emission part, the third emission part including a third emission layer; and a second electrode on the third emission part, in which a first thickness between the substrate and the first emission layer, a second thickness between the first emission layer and the second emission layer, a third thickness between the second emission layer and the third emission layer, and a fourth thickness between the third emission layer and the second electrode are different from each other, and the first, second emission, and third emission parts include at least one organic layer.

Organic light emitting display device

An organic light emitting display device is disclosed. The organic light emitting device includes a first light emitting part between an anode and a cathode, the first light emitting layer having a hole injection layer, a first hole transport layer, and a first light emitting layer; a second light emitting part over the first light emitting part, the second light emitting part having a second hole transport layer and a second light emitting layer; and a first charge generation layer between the first light emitting part and the second light emitting part, the first charge generation layer having a P-type charge generation layer, wherein at least one among the hole injection layer, the first hole transport layer, the second hole transport layer, and the P-type charge generation layer includes a carbonitrile compound.

An organic light emitting display device is disclosed. The organic light emitting display device comprises an emitting layer over an anode, the light emitting part having an emitting layer and an electron transporting layer, and a cathode on the light emitting part, wherein each of the emitting layer and the electron transporting layer includes a compound with the same core to facilitate electron transport from the electron transporting layer to the emitting layer.

Discussed is an organic light emitting display device. The organic light emitting display device according to an embodiment includes a first electrode and a second electrode on a substrate to be opposite to each other and at least three emission parts between the first electrode and the second electrode. A first distance between the substrate and the first emission layer, a second distance between the first emission layer and the second emission layer, a third distance between the second emission layer and the third emission layer, and a fourth distance between the third emission layer and the second electrode are different from each other.

Provided is a white organic light emitting diode device, including first and second electrodes facing each other above a substrate, first and second charge generation layers formed between the first electrode and the second electrode, a first stack disposed between the first electrode and the first charge generation layer and including a first light emitting layer, a second stack disposed between the first charge generation layer and the second charge generation layer and including a second light emitting layer, and a third stack disposed between the second charge generation layer and the second electrode and including a third light emitting layer, wherein two of the first to third light emitting layers emit a blue light and the rest light emitting layer emits a yellow-green light.

White organic light emitting diode device

An organic light emitting diode device and a method for manufacturing the same are disclosed. The organic light emitting diode device including a substrate, stacks disposed between a first electrode and a second electrode on the substrate, wherein the stacks including a first stack having a first blue layer and a second stack disposed on the first stack and having a second blue layer, and a first emission layer is formed at a partial region of the first stack, and a second emission layer is formed at a partial region of the second stack.

Organic light emitting diode device and method of manufacturing the same

The present invention further relates to an OLED device, including R, G, B, and W subpixels. Specifically, the OLED device comprises a substrate; a thin film transistor (TFT) active layer disposed on the substrate, comprising a gate electrode, a gate insulating layer, an active layer, an interlayer insulating layer, a source electrode, and a drain electrode; an overcoat layer disposed over the thin film transistor; and a passivation layer disposed between the thin film transistor and the overcoat layer, wherein the passivation layer is absent in a path of a light or wherein the passivation layer is disposed in the path of the light as a single layer comprising silicon nitride.

A method of fabricating an organic light emitting diode display device includes: sequentially forming a thin film transistor (TFT) array, a first electrode, a bank pattern, a spacer, and a first relevant layer on an acceptor substrate; sequentially forming a metal pattern and an organic light emission material layer on a doner substrate; aligning and attaching the acceptor substrate and the doner substrate, and forming the light emission layer by transferring the organic light emission material onto the acceptor substrate by applying power to the metal pattern; and sequentially forming the second relevant layer and the second electrode on the light emission layer-formed acceptor substrate.

Method of fabricating organic light emitting diode display

A method of fabricating an OLED display, includes sequentially forming a TFT array, first electrodes, and a first related layer on a first substrate, respectively forming heat-generating elements on second and third substrates, forming a red organic emission pattern on the second substrate, and forming a green organic emission pattern on the third substrate, aligning and attaching the first and second substrates, applying a voltage to heat-generating elements to transfer the red organic emission pattern to red pixel regions, thereby forming red organic emission layers, aligning and attaching the first and third substrates, applying a voltage to the heat-generating elements to transfer the green organic emission pattern to green pixel regions, thereby forming green organic emission layers, entirely depositing a blue organic emission material on the first substrate, thereby forming a blue organic emission layer, and sequentially forming a second related layer and a second electrode on the first substrate.

The present invention discloses a method of manufacturing a liquid crystal display device including a first photolithography process forming a gate electrode on a substrate; a second photolithography process including: a) depositing sequentially a gate insulating layer, first and second semiconductor layers, and a metal layer; b) applying a first photoresist on the metal layer; c) aligning a first photo mask with the substrate; d) light exposing and developing the first photoresist to produce a first photoresist pattern; e) etching the metal layer using a first etchant, the first etchant ashing the first photoresist pattern on a predetermined portion of the metal layer to produce a second photoresist pattern, thereby exposing the predetermined portion of the metal layer; and f) etching the gate insulating layer, the first and second semiconductor layer, and the predetermined portion of the metal layer using a second etchant according to the second photoresist pattern to form source and drain electrodes, an ohmic contact layer, and an active area; a third photolithography process forming a passivation film and a contact hole; and a fourth photolithography process forming a pixel electrode connecting with the drain electrode through the contact hole.

Liquid crystal display device and method of manufacturing the same

Growing community of inventors

Seoul, South Korea

ChangWook Han