Zhuzhou Crrc Times Semiconductor Co. Ltd.

Changwei Zheng

Haihui Luo

Chengzhan Li

Yafei Wang

Shasha Jiao

A cell structure of a silicon carbide MOSFET device, comprising a drift region () located on a substrate layer (), a second conducting type well region () and a first JFET region () that are located in the drift region (), an enhancement region located within a surface of the well region (), a gate insulating layer () located on a first conducting type enhancement region (), the well region () and the first JFET region () and being in contact therewith at the same time, a gate () located on the gate insulating layer, source metal () located on the enhancement region, Schottky metal () located on a second conducting type enhancement region () and the drift region (), a second JFET region () located on a surface of the drift region () between the Schottky metals (), and drain metal ().

Growing community of inventors

Hunan, China

Changwei Zheng