Asm IP Holding B.v.

ChangWan Lee

SungKyu Kang

HakJoon Lee

KyungEun Lee

A substrate processing method for gap-filling a recess between a first protrusion and a second protrusion of a pattern structure includes: changing a profile of a layer formed on the pattern structure, wherein the changing of the profile of the layer includes: in an upper area, increasing a width of the recess to suppress formation of a void in the upper area; and, in a lower area, reducing the width of the recess to contact the layer, thereby inducing formation of a void under the lower area, and thus allows a position of the void to be adjusted.

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Daejeon, South Korea

ChangWan Lee