Chinese Academy of Sciences

Changtao Wang

Xiangang Luo

Yanqin Wang

Zeyu Zhao

Chengwei Zhao

Mingbo Pu

Ping Gao

Yunfei Luo

Weijie Kong

Min Wang

Xiaoliang Ma

Xiong Li

Kaipeng Liu

Tiancheng Gong

Ling Liu

Na Yao

Yanwu Chu

Chenggang Hu

Guiyuan Jia

Cheng Huang

Leilei Yang

Xiangzhi Liu

Ge Yin

Jian Yan

Liqin Liu

Minggang Liu

Chengwenli Li

Jiong Wang

Yiyun Zhang

Jiayu He

Cheng Haung

Provided are an F-P sensor probe, an absolute distance measurement device, and an absolute distance measurement method, which relate to the field of non-contact absolute distance measurement technologies. This structure includes a first N+1-core multimode optical fiber probe (), an optical fiber sleeve (), an imaging lens group (), and a reference lens (), wherein: the first N+1-core multimode optical fiber probe (), the imaging lens group (), and the reference lens () are sequentially fixed inside the optical fiber sleeve () along a direction of the F-P sensor probe toward a sample (); and the first N+1-core multimode optical fiber probe () includes N first multimode optical fibers () and one second multimode optical fiber (), where N≥2, and the N first multimode optical fibers () are arranged around the second multimode optical fiber ().

F-P sensor probe, absolute distance measurement device, and absolute distance measurement method

Provided are template mark detection method and template position correction method based on single camera, including: performing image collection on mark on template by single camera, and obtaining binary image after preprocessing; performing corner detection of jagged edges on binary image to obtain corner set of jagged edges; performing edge detection and line detection sequentially on binary image to obtain set of edge line segments from coarse detection; traversing such set, and judging and retaining collinear line segments, to obtain set of collinear line segments from coarse detection; traversing corner set of jagged edges, for point-line collinearity judgment with line segments in set of collinear line segments from coarse detection, to obtain set of point-line from fine detection; and performing linear fitting on set of point-line from fine detection, and calculating an inclination angle of each straight line through an arctan function, thus completing detection of mark.

Template mark detection method and template position correction method based on single camera

Method for inverse optical proximity correction of super-resolution lithography based on level set algorithm is provided, including: obtaining first mask data according to a target pattern, and constructing a level set function; performing forward simulation, so as to obtain an electric field distribution on a photoresist and a first structural vector electric field distribution on a mask; obtaining a photoresist pattern according to the electric field distribution on the photoresist, and calculating an imaging error between the photoresist pattern and the target pattern; performing accompanying simulation, so as to obtain a second structural vector electric field distribution; obtaining a level set gradient by means of performing calculation according to the first structural vector electric field distribution, the second structural vector electric field distribution and the imaging error; and evolving the level set function, performing update to obtain second mask data, and performing iterative calculation until mask data meeting a preset condition is obtained.

Method for inverse optical proximity correction of super-resolution lithography based on level set algorithm

Provided is an near-field lithography immersion system, including: an immersion unit including: a liquid flow channel and a gas flow channel configured to apply gas to confine an immersion liquid provided by the liquid flow channel into an exposure field; at least two interface modules, the interface module includes a gas connector, a liquid connector and a brake connector, the gas connector and the liquid connector are correspondingly connected to the gas flow channel and the liquid flow channel, respectively, the brake connector is configured to control an assembly and a disassembly of the immersion unit, and the interface module is detachably connected to the immersion unit; and a mask loading module including a mask base plate and a mask, the immersion liquid is guided to an edge of the mask from below the mask base plate to form an immersion field between the mask and a substrate.

Near-field lithography immersion system, immersion unit and interface module thereof

The present disclosure provides a secondary imaging optical lithography method and apparatus. The method includes: contacting a lithography mask plate with a flexible transparent transfer substrate closely, the flexible transparent transfer substrate comprising a first near-field imaging structure having a photosensitive layer; irradiating the photosensitive layer through the lithography mask plate with a first light source, so as to transfer a pattern of the lithography mask plate to the photosensitive layer; coating a device substrate for fabricating devices with a photoresist; contacting the flexible transparent transfer substrate with the photoresist-coated device substrate closely; irradiating the device substrate through the flexible transparent transfer substrate with a second light source, so as to transfer a pattern of the photosensitive layer to the photoresist of the device substrate; and developing the device substrate comprising an exposed photoresist, so as to obtain a device pattern conforming to the pattern of the lithography mask plate.

Secondary imaging optical lithography method and apparatus

Provided are apparatuses and methods for super resolution imaging photolithography. An exemplary apparatus may include an illumination light generation device configured to generate illumination light for imaging a pattern included in a mask through the mask. The illumination light may include a high-frequency spatial spectrum such that a high-frequency evanescent wave component of spatial spectrum information for the light is converted to a low-frequency evanescent wave component after being transmitted through the mask pattern. For example, the illumination light generation device may be configured to form the illumination in accordance with a high numerical aperture (NA) illumination mode and/or a surface plasmon (SP) wave illumination mode.

Super-resolution imaging photolithography

Growing community of inventors

Chengdu, China

Changtao Wang