Samsung Electronics Co., Ltd.

Soulbrain Co., Ltd.

ChangSup Mun

Kyunghyun Kim

Yongsun Ko

Hoon Hee Han

Se-Ho Cha

Kyounghwan Kim

Jihoon Jeong

Daehong Eom

Sang Won Bae

Jinuk Lee

Jaewan Park

Junghun Lim

Seonghwan Park

Byoungmoon Yoon

Chanjin Jeong

Yanghwa Lee

Byoungkeun Son

Sukhun Choi

Kwangsu Kim

Young-taek Hong

Jinwoo Lee

Kijong Park

Keonyoung Kim

Young Taek Hong

Byoung Jae Park

Choongkee Seong

Sunjoong Song

Disclosed are a method of wet etching and a method of fabricating a semiconductor device. The wet etching method includes providing a wafer in a process bath and an etchant is accommodated, supplying the process bath with a primary etchant to control a concentration of a specific material in the etchant, supplying the process bath with a first additive to increase the concentration of the specific material in the etchant, and supplying the process bath with a second additive to suppress a defect caused by an increase in the concentration of the specific material in the etchant. The etchant includes at least one, of the primary etchant, the first additive, and the second additive. The first additive and the second additive are separately supplied to the process bath.

Method of wet etching and method of fabricating semiconductor device using the same

The inventive concepts provide a method of completely removing a damage region of a surface of an etch target layer after plasma-etching the etch target layer. The method includes performing a first post-etch plasma treatment process using a first post-treatment gas on the plasma-etched etch target layer. A polarity of ions of the first post-treatment gas may be the same as a polarity of bias power applied to a stage in a plasma apparatus.

Method of treating a layer

Etching compositions are provided. The etching composition includes a phosphoric acid, ammonium ions and a silicon compound material. The silicon compound material includes a silicon atom, at least one selected from the group of a nitrogen atom, a phosphorus atom and a sulfur atom combined with the silicon atom, and at least two oxygen atoms combined with the silicon atom. Methods utilizing the etching compositions are also provided.

Compositions for etching

Etching compositions are provided. The etching composition includes a phosphoric acid, ammonium ions and a silicon compound. The silicon compound includes a silicon atom, an atomic group having an amino group combined with the silicon atom, and at least two oxygen atoms combined with the silicon atom. Methods utilizing the etching compositions are also provided.

Compositions for etching and methods of forming a semiconductor device using the same

Provided are a three dimensional semiconductor memory device and a method of fabricating the same. The method includes forming a stepwise structure by using mask patterns and a sacrificial mask pattern formed on the mask patterns as a consumable etch mask.

Three dimensional semiconductor memory device and method of fabricating the same

Growing community of inventors

Suwon-si, South Korea

ChangSup Mun