Chinese Academy of Sciences

Changqing Xie

Ming Liu

Dongmei Li

Shengfa Liang

Hao Zhang

Xiaojing Li

Lina Shi

Qing Luo

Jiebin Niu

Hailiang Li

Xiaoli Zhu

Yu Liu

Xin Chen

Ling Li

Guozhong Xing

Huai Lin

Kaiping Zhang

Shuang Zhan

Peiwen Zhang

Qi Liu

Di Wang

Hangbing Lv

Lei Zhou

Zongliang Huo

Shibing Long

Long Liu

Cheng Lu

Zuheng Wu

Kangwei Zhang

Nan Gao

Longjie Li

Hongzhang Yang

Yilei Hua

Qingyun Zuo

A self-reference storage structure includes: three transistors, including a first transistor T, a second transistor T, and a third transistor T; and two magnetic tunnel junctions, including a first magnetic tunnel junction MTJand a second magnetic tunnel junction MTJ. The first magnetic tunnel junction MTJis connected in series between the first transistor Tand the second transistor T, and the second magnetic tunnel junction MTJis connected in series between the second transistor Tand the third transistor T. When the first transistor T, the second transistor Tand the third transistor Tare turned on, one-bit binary information is written; and when data is stored, one-bit binary write can be implemented only by applying an unidirectional current pulse.

Self-reference storage structure and in-memory computing circuit

The three-state spintronic device includes: a bottom electrode, a magnetic tunnel junction and a top electrode from bottom to top. The magnetic tunnel junction includes: a spin-orbit coupling layer, a ferromagnetic free layer, a barrier tunneling layer, a ferromagnetic reference layer, three local magnetic domain wall pinning centers and domain wall nucleation centers. An antisymmetric exchange interaction is modulated, and the magnetic domain wall pinning centers are embedded in an interface between a heavy metal and the ferromagnetic free layer. The magnetic domain wall nucleation centers are at two ends of the ferromagnetic free layer. A current pulse flows through the spin-orbit coupling layer to generate a spin current and the spin current is injected into the ferromagnetic free layer. Under a control of all-electrical controlled, an effective field of a spin-orbit torque drives domain wall to move and displace.

Three-state spintronic device, memory cell, memory array and read-write circuit

The present disclosure provides a method for fabricating an anti-reflective layer on a quartz surface by using a metal-induced self-masking etching technique, comprising: performing reactive ion etching to a metal material and a quartz substrate by using a mixed gas containing a fluorine-based gas, wherein metal atoms and/or ions of the metal material are sputtered to a surface of the quartz substrate, to form a non-volatile metal fluoride on the surface of the quartz substrate; forming a micromask by a product of etching generated by reactive ion etching gathering around the non-volatile metal fluoride; and etching the micromask and the quartz substrate simultaneously, to form an anti-reflective layer having a sub-wavelength structure.

Method for fabricating anti-reflective layer on quartz surface by using metal-induced self-masking etching technique

The present disclosure provides a method for cleaning a lanthanum gallium silicate wafer which comprises the following steps: at a step of 1, a cleaning solution constituted of phosphorous acid, hydrogen peroxide and deionized water is utilized to clean the lanthanum gallium silicate wafer with a megahertz sound wave; at a step of 2, the cleaned lanthanum gallium silicate wafer is rinsed and dried by spinning; at a step of 3, a cleaning solution constituted of ammonia, hydrogen peroxide and deionized water is utilized to clean the lanthanum gallium silicate wafer with the megahertz sound wave; at a step of 4, the cleaned lanthanum gallium silicate wafer is rinsed and dried by spinning; and at a step of 5, the rinsed and dried wafer is placed in an oven to be baked. The present invention shortens a period of acidic cleaning process and prolongs a period of alkaline cleaning and utilizes a more effective cleaning with megahertz sound wave to replace the conventional ultrasonic cleaning to solve the issue of cleaning the lanthanum gallium silicate wafer after a cutting process and to improve surface cleanliness of the lanthanum gallium silicate wafer to get a better cleaning effect.

Method for cleaning lanthanum gallium silicate wafer

A sampler adapted to a one-dimension slow-varying signal, including: a signal preprocessing unit configured to preprocess an input signal; a slope-controllable sawtooth wave signal generating unit configured to generate a slope-controllable sawtooth wave signal and perform zero-resetting; a signal comparing unit configured to compare the preprocessed input signal from the signal preprocessing unit with the sawtooth wave signal and to output a pulse signal to the generating unit and a signal outputting unit when the preprocessed input signal is equal to the sawtooth wave signal; a counting unit configured to count a number of clock signals while the sawtooth wave signal generating unit is generating the sawtooth wave signal and to transmit the counted number to the signal outputting unit; the signal outputting unit configured to, upon receipt of the pulse signal output from the signal comparing unit, output the number counted by the counting unit at the moment.

Random sampler adapted to one-dimension slow-varying signal

A method for manufacturing an NOgas sensor for detection at room temperature comprises: manufacturing a metal electrode on a surface of a flexible substrate; manufacturing an SWCNTs/SnOsensitive film; and bonding the SWCNTs/SnOsensitive film with a portion of the surface of the flexible substrate with the metal electrode, so as to form the NOgas sensor for detection at room temperature. The present disclosure solves the problems of the poor adhesion between the sensitive material and the flexible substrate, and a non-uniform distribution, and achieves the purposes of secure bonding between the sensitive material and the flexible substrate, and uniform distribution.

[object Object]

A defect detection system for an extreme ultraviolet lithography mask comprises an extreme ultraviolet light source (), extreme ultraviolet light transmission parts (), an extreme ultraviolet lithography mask (), a photon sieve () and a collection () and analysis () system. Point light source beams emitted by the extreme ultraviolet light source () are focused on the extreme ultraviolet lithography mask () through the extreme ultraviolet light transmission parts (); the extreme ultraviolet lithography mask () emits scattered light and illuminates the photon sieve (); and the photon sieve () forms a dark field image and transmits the same to the collection () and analysis () system. The defect detection system for the extreme ultraviolet photolithographic mask uses the photon sieve to replace a Schwarzchild objective, thereby realizing lower cost, relatively small size and high resolution.

Defect detection system for extreme ultraviolet lithography mask

A method for collecting a signal with a frequency lower than a Nyquist frequency includes, by a data transmitting end, selecting a suitable transformation base matrix for an input signal, deriving a sparse representation of the signal using the transformation base matrix to determine a sparsity of the signal, calculating a number M of compressive sampling operations according to the sparsity, sampling the signal with fusing M channels, and integrating sampling values of each channel to obtain M measurement values. A reconstruction end reconstructs an original signal by solving optimization problems. Based on theory, compressive sampling can be performed on a sparse signal or a signal represented in a sparse manner with a frequency much lower than the Nyquist frequency, overcoming restrictions of the typical Nyquist sampling theorem. The method can be implemented simply and decrease pressure on data collection, storage, transmission and processing.

Method for collecting signal with sampling frequency lower than Nyquist frequency

A method of manufacturing a sub-wavelength extreme ultraviolet metal transmission grating is disclosed. In one aspect, the method comprises forming a silicon nitride self-supporting film window on a back surface of a silicon-based substrate having both surfaces polished, then spin-coating a silicon nitride film on a front surface of the substrate with an electron beam resist HSQ. Then, performing electron beam direct writing exposure on the HSQ, developing and fixing to form a plurality of grating line patterns and a ring pattern surrounding the grating line patterns. Then depositing a chrome material on the front surface of the substrate through magnetron sputtering. Then, removing the chrome material inside the ring pattern. Then, growing a gold material on the front surface of the substrate through atomic layer deposition. Lastly, removing the gold material on the chrome material outside the ring pattern as well as on and between the grating line patterns, thereby only retaining the gold material on sidewalls of the grating line patterns.

Sub-wavelength extreme ultraviolet metal transmission grating and manufacturing method thereof

The present disclosure provides a method for manufacturing ordered nanowires array of NiO doped with Pt in situ, comprising: growing a Ni layer on a high-temperature resistant and insulated substrate; applying a photoresist on the Ni layer, pattering a pattern region of the ordered nanowires array by applying electron beam etching on the photoresist, growing Ni on the pattern region of the ordered nanowires array, peeling off the photoresist by acetone and etching the surface of the Ni layer by ion beam etching so as to etch off the Ni layer grown on the surface of the substrate and to leave the Ni on the pattern region of the ordered nanowires array to form the ordered Ni nanowires array; dipping the ordered Ni nanowires array into a solution of HPtClso as to displace Pt on the Ni nanowires array by a displacement reaction; and oxidizing the Ni nanowires array attached with Pt in an oxidation oven to obtain the ordered nanowires array of NiO doped with Pt. The present invention is simple and practical and the sensitivity and reliability of the doped sensor on the gas of CO and Hare greatly improved.

Method for manufacturing ordered nanowire array of NiO doped with Pt in situ

The present disclosure relates to the field of micro-nano fabrication, and provides a projection-type photolithography system using a composite photon sieve. The system comprises: a lighting system, a mask plate, a composite photon sieve and a substrate, which are arranged in order. The lighting system is adapted to generate incident light and irradiate the mask plate with the incident light. The mask plate is adapted to provide an object to be imaged by the composite photon sieve, and the incident light reaches the composite photon sieve after passing through the mask plate. The composite photon sieve is adapted to perform imaging, by which a pattern on the mask plate is imaged on the substrate. The substrate is adapted to receive an image of the pattern on the mask plate imaged by the composite photon sieve. According to the present disclosure, because the composite photon sieve is used instead of a projection objective lens in a conventional projection-type photolithography system, the advantage of high efficiency in the conventional projection-type photolithography system can be reserved, and also photolithography can be performed in batches rapidly, so that photolithography efficiency can be improved. Meanwhile, costs can be effectively cut down and the system can be reduced in size.

Projection-type photolithography system using composite photon sieve

One time programming memory and methods of storage and manufacture of the same are provided. Examples relate to microelectronic memory technology and manufacture. The one time programming memory includes a diode () having a unidirectional conducting rectification characteristic and a variable-resistance memory () having a bipolar conversion characteristic. The diode () having the unidirectional conducting rectification characteristic and the variable-resistance memory () having the bipolar conversion characteristic are connected in series. The one time programming memory device of this example takes the bipolar variable-resistance memory () as a storage unit, programming the bipolar variable-resistance memory () into different resistance states so as to carry out multilevel storage, and takes the unidirectional conducting rectification diode () as a gating unit. The rectification characteristic of unidirectional conducting rectification diode () can not only enable the bipolar variable-resistance storage () to be programmed only once but also inhibit crosstalk in a cross-array structure.

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Beijing, China

Changqing Xie