Stats Chippac Pte. Ltd.

ChangOh Kim

SungWon Cho

Jiwon Lee

JinHee Jung

KyoungHee Park

Kyowang Koo

YuJeong Jang

BongWoo Choi

Jinhee Jung

OMin Kwon

Il Kwon Shim

HeeSoo Lee

InSang Yoon

SeongHwan Park

HunTeak Lee

KyungHwan Kim

Sung Ho Choi

Sung Jae Lim

Jong Ho Shin

Dong Won Son

Byeonghoon Kim

YoungCheol Kim

Omin Kwon

Seonhong Choi

DaePark Lee

YongJin Jeong

YoungKang Lee

A semiconductor device has a substrate. A semiconductor die is disposed over the substrate. A first encapsulant is deposited over the semiconductor die. A ferromagnetic film is disposed over the first encapsulant. A second encapsulant is deposited over the ferromagnetic film. A shielding layer is optionally formed over the substrate, first encapsulant, and second encapsulant.

Method of forming an embedded magnetic shielding device

A semiconductor device is formed using a jig. The jig includes a metal frame, a polymer film, and an adhesive layer disposed between the metal frame and polymer film. An opening is formed through the adhesive layer and polymer film. A groove is formed around the opening. A semiconductor package is disposed on the jig over the opening with a side surface of the semiconductor package adjacent to the groove. A shielding layer is formed over the semiconductor package and jig. The semiconductor package is removed from the jig.

Semiconductor device and method for reducing metal burrs using laser grooving

A semiconductor device has a substrate and a slot formed in the substrate. A first electrical component is disposed over the substrate adjacent to the slot. An encapsulant is deposited over the first electrical component with a surface of the encapsulant coplanar to a surface of the substrate within the slot. A shielding layer is formed over the encapsulant and physically contacting the surface of the substrate within the slot. The substrate is singulated to form a semiconductor package with the first electrical component after forming the shielding layer.

Semiconductor device and method of forming selective EMI shielding with slotted substrate

A semiconductor device has a substrate and encapsulant deposited over the substrate. An electrical connector is disposed over the substrate outside the encapsulant. An antenna can be formed over the substrate. A first shielding material is disposed over a portion of the encapsulant without covering the electrical connector with the first shielding material. The first shielding material is disposed over the portion of the encapsulant and the portion of the substrate using a direct jet printer. A cover is disposed over the electrical connector. A second shielding material is disposed over the encapsulant to prevent the second shielding material from reaching the electrical connector. The second shielding material overlaps the first shielding material and covers a side surface of the encapsulant and a side surface of the substrate. The cover is removed to expose the electrical connector free of shielding material.

Semiconductor device and method of forming EMI shielding material in two-step process to avoid contaminating electrical connector

A semiconductor device includes a substrate. An electrical component is disposed over the substrate. An encapsulant is deposited over the electrical component. A vertical interconnect structure is disposed in the encapsulant. A shielding layer is formed over the encapsulant and vertical interconnect structure. A groove is formed in the shielding layer around the vertical interconnect structure. A portion of the shielding layer remains over the vertical interconnect structure as a contact pad.

Semiconductor device and method for partial EMI shielding

A semiconductor device has a first package layer. A first shielding layer is formed over the first package layer. The first shielding layer is patterned to form a redistribution layer. An electrical component is disposed over the redistribution layer. An encapsulant is deposited over the electrical component. A second shielding layer is formed over the encapsulant. The second shielding layer is patterned. The patterning of the first shielding layer and second shielding layer can be done with a laser. The second shielding layer can be patterned to form an antenna.

Semiconductor device and method for forming electromagnetic interference (EMI) shielded packages with laser-based redistribution and multi-stacked packages

A semiconductor device has an electronic component assembly with a substrate and a plurality of electrical components disposed over the substrate. A conductive post is formed over the substrate. A molding compound sheet is disposed over the electrical component assembly. A carrier including a first electrical circuit pattern is disposed over the molding compound sheet. The carrier is pressed against the molding compound sheet to dispose a first encapsulant over and around the electrical component assembly and embed the first electrical circuit pattern in the first encapsulant. A shielding layer can be formed over the electrical components assembly. The carrier is removed to expose the first electrical circuit pattern. A second encapsulant is deposited over the first encapsulant and the first electrical circuit pattern. A second electrical circuit pattern is formed over the second encapsulant. A semiconductor package is disposed over the first electrical circuit pattern.

Semiconductor device and method of forming electrical circuit pattern within encapsulant of sip module

A semiconductor device has a substrate. A first electrical component and second electrical component are disposed over the substrate. A conductive pillar is formed over the substrate between the first electrical component and second electrical component. A first shielding layer is formed over the first electrical component and conductive pillar by jet printing conductive material. A second shielding layer is formed over the first electrical component and second electrical component by sputtering, spraying, or plating conductive material. An insulating layer is optionally formed between the first shielding layer and second shielding layer by jet printing insulating material over the first shielding layer.

Semiconductor device and method of making double shielding layers over the semiconductor device

A semiconductor device has a substrate. An electrical component is disposed over a surface of the substrate. An encapsulant is deposited over the electrical component and substrate. A portion of the surface of the substrate remains exposed from the encapsulant. A shielding layer is formed over the encapsulant. A portion of the shielding layer is removed to expose the portion of the surface of the substrate.

Shielded semiconductor package with open terminal and methods of making

A semiconductor device has a substrate and electrical components disposed over the substrate. An encapsulant is disposed over the substrate and electrical components. A multi-layer shielding structure is formed over the encapsulant. The multi-layer shielding structure has a first layer of ferromagnetic material and second layer of a protective layer or conductive layer. The ferromagnetic material can be iron, nickel, nickel iron alloy, iron silicon alloy, silicon steel, nickel iron molybdenum alloy, nickel iron molybdenum copper alloy, iron silicon aluminum alloy, nickel zinc, manganese zinc, other ferrites, amorphous magnetic alloy, amorphous metal alloy, or nanocrystalline alloy. The first layer can be a single, homogeneous material. The protective layer can be stainless steel, tantalum, molybdenum, titanium, nickel, or chromium. The conductive layer can be copper, silver, gold, or aluminum. The multi-layer shielding structure protects the electrical components from low frequency and high frequency interference.

Semiconductor device and method of forming multi-layer shielding structure with layers of ferromagnetic material, protective material, laminate material or conductive material over the semiconductor device

A semiconductor device is formed by providing a semiconductor package including a shielding layer and forming a slot in the shielding layer using a laser. The laser is turned on and exposed to the shielding layer with a center of the laser disposed over a first point of the shielding layer. The laser is moved in a loop while the laser remains on and exposed to the shielding layer. Exposure of the laser to the shielding layer is stopped when the center of the laser is disposed over a second point of the shielding layer. A distance between the first point and the second point is approximately equal to a radius of the laser.

PSPI-based patterning method for RDL

A semiconductor device has a substrate. A lid is disposed over the substrate. An encapsulant is deposited over the substrate. A film mask is disposed over the encapsulant with the lid exposed from the film mask and encapsulant. A conductive layer is formed over the film mask, encapsulant, and lid. The film mask is removed after forming the conductive layer.

Semiconductor device with partial EMI shielding and method of making the same

A semiconductor device has a semiconductor package including a substrate comprising a land grid array. A component is disposed over the substrate. An encapsulant is deposited over the component. The land grid array remains outside the encapsulant. A fanged metal mask is disposed over the land grid array. A shielding layer is formed over the semiconductor package. The fanged metal mask is removed after forming the shielding layer.

Selective EMI shielding using preformed mask with fang design

Semiconductor device and method of forming a slot in EMI shielding with improved removal depth

A semiconductor device has a substrate. A first component and second component are disposed over the substrate. The first component includes an antenna. A lid is disposed over the substrate between the first component and second component. An encapsulant is deposited over the substrate and lid. A conductive layer is formed over the encapsulant and in contact with the lid. A first portion of the conductive layer over the first component is removed using laser ablation.

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Incheon, South Korea

ChangOh Kim