Samsung Electronics Co., Ltd.

Changki Hong

Young-Hoo Kim

Sung-Jun Kim

Daehong Eom

Imsoo Park

Uin Chung

Jaedong Lee

Changgyu Kim

Yongchul Ahn

Boun Yoon

Kuntack Lee

Hyosan Lee

Jeongnam Han

Sangjun Choi

Youngok Kim

Hyungho Ko

Woosung Han

Donggyun Han

A method of manufacturing a nonvolatile memory device having a three-dimensional memory device includes alternately stacking a plurality of first and second material layers having a different etching selectivity on a semiconductor substrate; forming an opening penetrating the plurality of first and second material layers; removing the first material layers exposed by the opening to form extended portions extending in a direction perpendicular to the semiconductor substrate from the opening; conformally forming a charge storage layer along a surface of the opening and the extended portions; and removing the charge storage layer formed on sidewalls of the second material layers to locally form the charge storage layer patterns in the extended portions.

Method of manufacturing nonvolatile memory device and nonvolatile memory device manufactured by the method

The inventive concept provides a wafer test method and a wafer test apparatus. The wafer test method can recognize the amount of residuals generated in a sidewall of the metal-containing layer pattern and the extent of corrosion of a sidewall of the metal-containing layer pattern using the measured electric resistance by supplying an electrolyte so that the electrolyte is in contact with a portion of the metal-containing layer pattern in a predetermined chip region and measuring an electric resistance between a first electrode which is electrically in contact with the other portion of the metal-containing layer pattern and a second electrode which is in contact with the electrolyte in the predetermined region. Thus, a wafer test method and a wafer test apparatus can be embodied by an in-line method without dividing a wafer into each chip.

Wafer test method and wafer test apparatus

An apparatus and method for removing photoresist from a substrate, which includes treating the photoresist with a first reactant to cause swelling, cracking or delamination of the photoresist, treating the photoresist with a second reactant to chemically alter the photoresist, and subsequently removing the chemically altered photoresist with a third reactant. In one example, the first reactant is supercritical carbon dioxide (SCCO), the second reactant is ozone vapor, and the third reactant is deionized water.

Apparatus and method for removing photoresist from a substrate

The surface of a borophosphosilicate glass (BPSG) dielectric film undergoes a surface treatment, such as by plasma treatment with N.sub.2 O, N.sub.2 +NH.sub.3, N.sub.2, O.sub.2 or O.sub.3. Erosion caused by H.sub.2 SO.sub.4 boiling or by humidity absorption from the atmosphere is thereby reduced so that reflow processing at temperatures ideally below 850.degree. C. is possible and an interlayer dielectric film of excellent planarity is thus formed.

Method for fabricating doped interlayer-dielectric film of semiconductor

The surface of a borophosphosilicate glass (BPSG) dielectric film is changed through a surface treatment, such as by plasma etching with N.sub.2 O, O.sub.3 or O.sub.2. Erosion caused by H.sub.2 SO.sub.4 boiling or by humidity absorption from the atmosphere is thereby reduced so that reflow processing at temperatures below 850.degree. C. is possible and an interlayer dielectric film of excellent planarity is thus formed.

Method for fabricating an interlayer-dielectric film of a semiconductor

Growing community of inventors

Seongnam-si, South Korea

Changki Hong