Samsung Electronics Co., Ltd.

Samsung Display Co., Ltd.

Changjung Kim

Youngsoo Park

Sangwook Kim

Sunil Kim

Sangyoon Lee

Jaechul Park

Kihwan Kim

Taesang Kim

Ihun Song

Jangyeon Kwon

Kyungseok Son

Jisim Jung

Bosoo Kang

Joon Seok Park

Beomjun Kim

Changbum Lee

Kang-Woo Kim

Seungeon Ahn

Junghyun Lee

Gwon-Heon Ryu

Seongyeol Syn

Bosung Kim

Myungjae Lee

A display apparatus includes a display panel, a timing controller, a data driver and a voltage generator. The display panel includes a switching element, a pixel electrode connected to the switching element, a common electrode, a storage electrode and a pixel electrode. The timing controller processes input image data according to a variable frame rate and generates a data signal having a variable frame length. The data driver converts the data signal into a data voltage and outputs the data voltage to the pixel electrode. The voltage generator may apply a common voltage to the common electrode and a storage voltage greater than the common voltage to the storage electrode, and/or apply the common voltage varied according to a grayscale value of the input image data. Embodiments may reduce or obviate a display defect caused by luminance differences between frames displayed at different frame rates.

Display apparatus and method of driving display panel thereof

A thin film transistor includes: a lower gate electrode on a substrate; a gate insulating layer on the lower gate electrode; a first semiconductor layer on the gate insulating layer; a source electrode on the first semiconductor layer, a drain electrode on the first semiconductor layer and spaced apart form the source electrode; a second semiconductor layer on a channel region of the first semiconductor layer and on the source electrode and the drain electrode; a passivation layer on the second semiconductor layer; and an upper gate electrode disposed on the passivation layer, corresponding to the channel region.

Thin film transistor and display device including the same

Disclosed is a resistive memory device. In the resistive memory device, at least one variable resistance region and at least one switching device may be horizontally apart from each other, rather than being disposed on the same vertical axis. At least one intermediate electrode, which electrically connects the at least one variable resistance region and the at least one switching device, may be between the at least one variable resistance region and the at least one switching device.

Resistive memory device

Provided is a method of manufacturing an oxide semiconductor thin film transistor using a transparent oxide semiconductor as a material for a channel. The method of manufacturing the oxide semiconductor thin film transistor includes forming a passivation layer on a channel layer and performing an annealing process for one hour or more at a temperature of about 100&#xb0; C. or above.

Methods of manufacturing oxide semiconductor thin film transistor

An oxide semiconductor and a thin film transistor (TFT) including the same. The oxide semiconductor may be obtained by adding hafnium (Hf) to gallium-indium-zinc oxide (GIZO) and may be used as a channel material of the TFT.

Oxide semiconductor and thin film transistor including the same

A method of operating inverter may include providing a load transistor and a driving transistor connected to the load transistor wherein at least one of the load transistor and the driving transistor has a double gate structure, and varying a threshold voltage of the at least one of the load transistor and the driving transistor having the double gate structure. A threshold voltage of the load transistor or the driving transistor may be adjusted by the double gate structure, and accordingly, the inverter may be an enhancement/depletion (E/D) mode inverter.

Method of operating inverter

A touch panel may include a plurality of piezoelectric nanowires between a plurality of first transparent electrodes and plurality second transparent electrodes that cross each other; an ultrasonic wave generator configured to generate ultrasonic waves from the piezoelectric nanowires; and at least one ultrasonic wave echo sensor configured to detect ultrasonic waves that are generated from the plurality of piezoelectric nanowires and return to the plurality of piezoelectric nanowires after colliding with an object approaching the plurality of piezoelectric nanowires.

Touch panel including nanowire

Provided is a touch panel using a zinc oxide (ZnO) nano wire. The touch panel may include a first transparent substrate, a first transparent electrode layer on the first transparent substrate, a light transmissive nano wire layer including a plurality of piezoelectric nano wires that may be arranged on the first transparent electrode layer so as to be perpendicular to the first transparent electrode layer, a second transparent electrode layer on the nano wire layer, and a second transparent substrate on the second transparent electrode layer.

Touch panel using nano-wire

Provided are a memory device formed using one or more source materials not containing hydrogen as a constituent element and a method of manufacturing the memory device.

Method of manufacturing a memory device

Provided are an inverter, a method of operating the inverter, and a logic circuit including the inverter. The inverter may include a load transistor and a driving transistor, and at least one of the load transistor and the driving transistor may have a double gate structure. A threshold voltage of the load transistor or the driving transistor may be adjusted by the double gate structure, and accordingly, the inverter may be an enhancement/depletion (E/D) mode inverter.

Growing community of inventors

Yongin-si, South Korea

Changjung Kim