Samsung Electronics Co., Ltd.

Changhyun Lee

Byoungkeun Son

Sung-Il Chang

Jungdal Choi

Hyejin Cho

Youngwoo Park

Sunghoi Hur

Chanjin Park

Yoocheol Shin

Hyunjung Kim

Byeong-In Choe

Chung-Il Hyun

Kihyun Kim

Hansoo Kim

Jaehoon Jang

Shinhwan Kang

Jin-Soo Lim

Dusan Baek

Heonkyu Lee

Gyeyoung Lee

Haein Chun

Jinsung Kim

Sunil Shim

Kwang Soo Seol

Jinman Han

Jaegoo Lee

Doogon Kim

Sungmok Seo

Junho Koh

Byungkwan You

Soonhyung Gwon

Sooyoung Lee

Yonghyun Lim

Jongin Yun

Hyunki Jung

Jaehong Kim

Hun Il Lim

Sung-Min Hwang

Yangwook Kim

Jaeduk Lee

Jongyoub Ryu

Dohyun Lee

Jaeho Jung

Chiyoun Park

Jaedeok Kim

Woojoo Kim

Chungyong Eom

Hyunsuk Min

Yunjae Lim

Changhan Kim

Daedong Kim

Youngchul Sohn

Sangsun Choi

Jaeeun Kang

Inkwon Choi

Byungkyu Cho

Byeong-In Choi

Seokang Kim

Chulwoo Lee

Eunhui Bae

Yongsik Yim

Yoseong Song

Yesil Seo

Kyoungjin Moon

Sung-Ii Chang

Hoejin Kwen

Su Jin Ahn

Seunghee Cho

Sunhil Shim

Manseok Kang

Jungal Choi

A cooking apparatus includes a main body including a cooking chamber, a door configured to open and close the cooking chamber of the main body, a wire inserted into the main body from an inside of the door, a service hole formed on an upper surface of the main body to allow access to the wire inserted into the inside of the main body, and a service panel removably mounted to the main body so as to open and close the service hole.

Cooking apparatus

Provided is a cooking appliance including a grille frame with a filter fixing structure. The cooking appliance includes: a cabinet; a hood flow path formed inside the cabinet; a blower positioned in the cabinet to form an air flow inside the hood flow path; a filter positioned on the hood flow path to filter the air flow supplied from the blower; and a grille frame including an outlet discharging filtered air to an outside of the cabinet, and forming a plurality of support spaces, wherein a lower end of the filter is inserted in and supported by one support space of the plurality of support spaces.

Cooking appliance

Three-dimensional semiconductor devices are provided. The three-dimensional semiconductor device includes a substrate, a buffer layer on the substrate. The buffer layer includes a material having an etching selectivity relative to that of the substrate. A multi-layer stack including alternating insulation patterns and conductive patterns is provided on the buffer layer opposite the substrate. One or more active patterns respectively extend through the alternating insulation patterns and conductive patterns of the multi-layer stack and into the buffer layer. Related fabrication methods are also discussed.

Three dimensional semiconductor devices

An electronic device for reconstructing an artificial intelligence model, and a control method thereof are provided. The control method includes inputting at least one input data to a first artificial intelligence (AI) model, to acquire at least one output data, acquiring first usage information, based on the acquired at least one output data, acquiring first reconstruction information for reconstructing the first AI model, based on the acquired first usage information, and reconstructing the first AI model, based on the acquired first reconstruction information, to acquire a second AI model.

Electronic device for reconstructing an artificial intelligence model and a control method thereof

A semiconductor device includes a substrate, a stack, and channel structures penetrating the stack. The stack includes gate electrodes and insulating layers alternately and repeatedly stacked on the substrate, and extending in a first direction. The channel structures in a first row are spaced apart from each other in the first direction. The stack includes a first sidewall that includes first recessed portions and first protruding portions. Each of first recessed portions is defined by an adjacent pair of the first recessed portions. Each of the first recessed portions has a shape recessed toward a first region of the stack between an adjacent pair of the channel structures of the first row. Each of the first recessed portions has a width that decreases in a direction toward the first region when measured along the first direction.

Semiconductor device including a stack having a sidewall with recessed and protruding portions

A three-dimensional semiconductor device includes an upper structure on a lower structure, the upper structure including conductive patterns, a semiconductor pattern connected to the lower structure through the upper structure, and an insulating spacer between the semiconductor pattern and the upper structure, a bottom surface of the insulating spacer being positioned at a vertical level equivalent to or higher than an uppermost surface of the lower structure.

Semiconductor devices

A method and an apparatus for controlling a temperature adjustment device using a sensing device are provided. The method includes setting a test temperature, transmitting a temperature adjustment instruction corresponding to the test temperature to a temperature adjustment device, calculating a sleep score based on bio information received from the sensor, when applying the test temperature, and determining a sleep optimal temperature based on the calculated sleep score.

Method and apparatus for controlling temperature adjustment device

Three-dimensional (3D) nonvolatile memory devices include a substrate having a well region of second conductivity type (e.g., P-type) therein and a common source region of first conductivity type (e.g., N-type) on the well region. A recess extends partially (or completely) through the common source region. A vertical stack of nonvolatile memory cells on the substrate includes a vertical stack of spaced-apart gate electrodes and a vertical active region, which extends on sidewalls of the vertical stack of spaced-apart gate electrodes and on a sidewall of the recess. Gate dielectric layers extend between respective ones of the vertical stack of spaced-apart gate electrodes and the vertical active region. The gate dielectric layers may include a composite of a tunnel insulating layer, a charge storage layer, a relatively high bandgap barrier dielectric layer and a blocking insulating layer having a relatively high dielectric strength.

Three-dimensional semiconductor memory devices

A device management method and apparatus is provided for managing electronic devices through wireless communication. A device management method of a first device having a list of wireless communication-enabled devices according to the present disclosure includes transmitting a first message requesting second device information, when it is necessary to check connection status of a second device performing wireless communication with the devices contained in the list, comparing the second device previously stored information and the second device information contained in the second message, when a second message including the second device information is received in response to the first message, and transmitting a recovery command message with the first device information, when the second device information included in the second message differs from the previously stored second device information.

Method and apparatus for managing electronic device through wireless communication

Three-dimensional semiconductor devices

A lighting control method and an electronic device using the same are provided. The method includes receiving pattern information for controlling lighting, generating lighting control information including brightness level information corresponding to operation time information based on the received pattern information, and transmitting the lighting control information.

Method and apparatus for controlling lighting

Provided are nonvolatile memory devices and methods of forming the same. The nonvolatile memory device includes a plurality of word lines, a ground select line, string select line, and a dummy word line. Each of distances between the dummy word line and the ground select line and between the dummy word line and the word line is greater than a distance between a pair of the word lines adjacent to each other.

Nonvolatile memory devices and methods forming the same

Growing community of inventors

Suwon-si, South Korea

Changhyun Lee